DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4536 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS The 2SC4536 is designed for use in middle power, low distortion low (Unit: mm) noise figure RF amplifier. It features excellent linearity and large dynamic range, which make it suitable for CATV, telecommunication, and other use, 4.5±0.1 it employs plastic surface mount type package (SOT-89). 1.5±0.1 0.8 MIN. • Low Distortion IM2 = 57.5 dB TYP. @ VCE = 10 V, IC = 50 mA IM3 = 82 dB TYP. @ VCE = 10 V, IC = 50 mA • Low Noise NF = 1.5 dB TYP. C E B 0.42 ±0.06 4.0±0.25 FEATURES 2.5±0.1 1.6±0.2 0.42±0.06 1.5 0.47 ±0.06 3.0 −0.03 0.41 +0.05 @ VCE = 10 V, IC = 10 mA, f = 1 GHz • Power Mini Mold Package Used. High Power Dissipation. ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Term, Connection E : Emitter C : Collector (Fin) B : Base (SOT-89) Maximum Voltage and Current (TA = 25 C) Collector to Base Voltage VCBO 30 V Collector to Emitter Voltage VCEO 15 V Emitter to Base Voltage VEBO 3.0 V Collector Current IC 250 mA 2.0 W 150 C to +150 C Maximum Power Dissipation Total Power Dissipation at 25 C Ambient Temperature PT* Maximum Temperatures Junction Temperature Tj Storage Temperature Range Tstg 65 2 * 0.7 mm 16 cm double sided ceramic substrate. (Copper plating) Document No. P10369EJ2V1DS00 (2nd edition) Date Published March 1997 N Printed in Japan © 1994 2SC4536 ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Collector Cutoff Current ICBO 5.0 A VCB = 20 V, IE = 0 Emitter Cutoff Current IEBO 5.0 A VEB = 2 V, IC = 0 DC Current Gain hFE S21e Insertion Power Gain 40 2 5.5 200 VCE = 10 V, IC = 50 mA 7.3 dB VCE = 10 V, IC = 50 mA, f = 1 GHz *1 Noise Figure 1 NF1 1.5 dB VCE = 10 V, IC = 50 mA, f = 500 MHz *2 Noise Figure 2 NF2 2.0 dB VCE = 10 V, IC = 50 mA, f = 1 GHz *2 2nd Intermodulation Distortion IM2 59.0 dB VCE = 10 V, IC = 50 mA, RS = RL = 75 Pin = 105 dBV/75 , f1 = 190 MHz f2 = 90 MHz, f = f1 f2 3rd Intermodulation Distortion IM3 82.0 dB VCE = 10 V, IC = 50 mA, RS = RL = 75 Pin = 105 dBV/75 , f1 = 190 MHz f2 = 200 MHz, f = 2 f1 f2 *1 Pulsed: PW 350 s, Duty Cycle 2 % *2 RS = RL = 50 , untuned hFE Classification Class QQ QR QS Marking QQ QR QS hFE 40 to 80 60 to 120 100 to 200 TYPICAL CHARACTERISTICS (TA = 25 C) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE IB = 0.6 mA 300 0.5 mA VCE = 10 V 0.4 mA 80 hFE-DC Current Gain IC-Collector Current-mA 100 DC CURRENT GAIN vs. COLLECTOR CURRENT 0.3 mA 60 0.2 mA 40 0.1 mA 20 0 10 VCE-Collector to Emitter Voltage-V 100 50 20 10 0.1 1 10 100 IC-Collector Current-mA 2 1000 2SC4536 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT FEED-BACK CAPACIATNCE vs. COLLECTOR TO BASE VOLTAGE 5.0 10 Cre-Feed-Back Capacitance-pF fT-Gain Bandwidth Product-GHz VCE = 10 V 5 1 0.5 f = 1 MHz IE = 0 1.0 0.5 0.2 0.2 5 1 10 50 100 300 5 10 30 VCB-Collector to Base Voltage-V IC-Collector Current-mA INSERTION POWER GAIN, MAXIMUM POWER GAIN AND MAXIMUM AVAILABLE GAIN vs. FREQUENCY VCE = 10 V IC = 50 mA Gmax(u) 8 Gmax(u) |S21e|2-Insertion Power Gain-dB Gmax-Maximum Power Gain-dB MAG-Maximum Available Gain-dB |S21e|2-Insertion Power Gain-dB Gmax-Maximum Power Gain-dB MAG-Maximum Available Gain-dB INSERTION POWER GAIN, MAXIMUM POWER GAIN AND MAXIMUM AVAILABLE GAIN vs. COLLECTOR CURRENT 10 VCE = 10 V MAG f = 1 GHz |S21e|2 6 4 2 0 10 50 100 20 |S21e|2 MAG 10 300 IC-Collector Current-mA 0 0.1 0.5 1 2 3 f-Frequency-GHz 3 2SC4536 VCE = 10 V f = 1 GHz NF-Noise Figure-dB 4 3 2 1 0 5 10 100 IC-Collector Current-mA 4 200 IM3-3rd Order Intermodulation Distortion-dB IM2+-2nd Order Intermodulation Distortion-dB IM2−-2nd Order Intermodulation Distortion-dB NOISE FIGURE vs. COLLECTOR CURRENT 5 3RD ORDER INTERMODULATION DISTORTION, 2ND ORDER INTERMODULATION DISTORTION (+) AND 2ND ORDER INTERMODULATION DISTORTION (−) vs. COLLECTOR CURRENT 80 VCE = 10 V IM3 70 60 IM2+ IM2− 50 40 30 10 IM3 : V0 = 110 dB µ V/75 Ω 2 tone each f = 2 × 190 MHz − 200 MHz IM2+ : V0 = 105 dB µ V/75 Ω 2 tone each f = 90 MHz + 100 MHz IM2− : V0 = 105 dB µ V/75 Ω 2 tone each f = 190 MHz − 90 MHz 50 100 IC-Collector Current-mA 300 2SC4536 S-PARAMETER 2SC4536 FREQUENCY MHz 100.00 200.00 300.00 400.00 500.00 600.00 700.00 800.00 900.00 1000.00 1100.00 1200.00 1300.00 1400.00 1500.00 1600.00 1700.00 1800.00 1900.00 2000.00 10V 50 mA S11 MAG 0.455 0.425 0.419 0.422 0.431 0.425 0.445 0.435 0.470 0.442 0.468 0.451 0.477 0.478 0.492 0.490 0.503 0.505 0.512 0.522 2SC4536 FREQUENCY MHz 100.00 200.00 300.00 400.00 500.00 600.00 700.00 800.00 900.00 1000.00 1100.00 1200.00 1300.00 1400.00 1500.00 1600.00 1700.00 1800.00 1900.00 2000.00 S21 ANG 139.5 164.6 177.2 175.9 167.7 162.2 155.2 151.7 146.4 142.1 138.1 132.3 129.4 124.2 122.1 116.9 115.8 111.9 109.3 105.4 MAG 19.845 10.155 7.482 5.341 4.356 3.612 3.271 2.843 2.497 2.292 2.163 1.982 1.816 1.712 1.701 1.538 1.489 1.399 1.445 1.291 MAG 0.033 0.057 0.085 0.100 0.125 0.148 0.179 0.194 0.210 0.237 0.270 0.285 0.296 0.315 0.349 0.355 0.375 0.382 0.424 0.414 ANG 101.0 91.6 85.5 78.0 74.8 70.9 67.8 61.6 58.6 56.5 52.0 48.2 44.6 44.0 38.9 35.9 32.8 32.3 28.4 24.4 MAG 0.035 0.059 0.084 0.103 0.126 0.149 0.183 0.197 0.215 0.242 0.274 0.289 0.300 0.321 0.357 0.359 0.379 0.387 0.431 0.418 S22 ANG 59.9 65.8 65.7 63.8 67.5 65.7 64.1 60.6 61.2 60.6 57.8 54.6 53.3 53.8 49.7 47.3 44.5 44.9 42.2 39.4 MAG 0.359 0.211 0.184 0.173 0.174 0.175 0.176 0.179 0.191 0.186 0.196 0.203 0.220 0.221 0.237 0.230 0.255 0.260 0.276 0.269 ANG 53.6 71.2 67.2 65.6 68.1 67.1 65.1 60.4 62.6 60.5 57.9 54.6 52.8 53.2 49.2 46.6 44.1 44.6 41.8 38.4 MAG 0.333 0.207 0.181 0.179 0.180 0.185 0.185 0.188 0.199 0.195 0.203 0.210 0.228 0.228 0.246 0.234 0.259 0.264 0.279 0.273 ANG 92.5 113.9 126.8 138.5 140.9 146.8 150.6 152.4 157.3 157.7 160.9 162.5 165.7 168.8 170.9 172.1 174.8 177.1 178.7 175.9 10V 100 mA S11 MAG 0.458 0.423 0.417 0.422 0.431 0.422 0.445 0.432 0.466 0.440 0.465 0.450 0.472 0.473 0.490 0.485 0.500 0.500 0.509 0.516 S12 ANG 103.5 93.1 86.4 78.5 75.3 71.2 68.1 61.6 58.6 56.5 51.9 48.1 44.4 43.7 38.6 35.7 32.6 32.0 28.2 24.3 S21 ANG 145.3 169.1 179.5 173.6 165.5 160.6 153.7 150.5 145.2 140.9 137.1 131.3 128.6 123.5 121.5 116.5 115.0 111.2 108.5 104.9 MAG 20.257 10.259 7.545 5.390 4.387 3.633 3.290 2.864 2.514 2.306 2.177 1.994 1.830 1.723 1.713 1.549 1.498 1.411 1.455 1.302 S12 S22 ANG 100.7 123.1 136.8 147.4 148.8 154.0 157.9 159.2 163.7 163.9 167.3 168.5 170.8 173.3 176.1 178.0 179.9 178.3 176.2 171.0 5 2SC4536 [MEMO] 6 2SC4536 [MEMO] 7 2SC4536 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. 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Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5