NEC 2SJ607-Z

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ607
SWITCHING
P-CHANNEL POWER MOS FET
ORDERING INFORMATION
DESCRIPTION
The 2SJ607 is P-channel MOS Field Effect Transistor designed
for high current switching applications.
PART NUMBER
PACKAGE
2SJ607
TO-220AB
FEATURES
2SJ607-S
TO-262
• Super low on-state resistance:
RDS(on)1 = 11 mΩ MAX. (VGS = −10 V, ID = −42 A)
RDS(on)2 = 16 mΩ MAX. (VGS = −4.0 V, ID = −42 A)
• Low input capacitance:
Ciss = 7500 pF TYP. (VDS = −10 V, VGS = 0 V)
• Built-in gate protection diode
2SJ607-ZJ
TO-263
2SJ607-Z
TO-220SMD
Note
Note TO-220SMD package is produced only in
Japan
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
−60
V
Gate to Source Voltage (VDS = 0 V)
VGSS
m 20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
m 83
A
Note1
ID(pulse)
m 332
A
Total Power Dissipation (TC = 25°C)
PT
160
W
Total Power Dissipation (TA = 25°C)
PT
1.5
W
Channel Temperature
Tch
150
°C
Drain Current (pulse)
Tstg
−55 to +150
°C
Single Avalanche Current
Note2
IAS
−50
A
Single Avalanche Energy
Note2
EAS
250
mJ
Storage Temperature
(TO-262)
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1%
2. Starting Tch = 25°C, VDD = −30 V, RG = 25 Ω, VGS = −20 → 0 V
(TO-263, TO-220SMD)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D14655EJ3V0DS00 (3rd edition)
Date Published July 2002 NS CP(K)
Printed in Japan
The mark ★ shows major revised points.
©
2000, 2001
2SJ607
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS
VDS = −60 V, VGS = 0 V
Gate Leakage Current
IGSS
VGS =
TYP.
m 20 V, VDS = 0 V
MAX.
UNIT
−10
µA
m 10
µA
−2.5
V
VGS(off)
VDS = −10 V, ID = −1 mA
−1.5
−2.0
| yfs |
VDS = −10 V, ID = −42 A
45
90
RDS(on)1
VGS = −10 V, ID = −42 A
9.1
11
mΩ
RDS(on)2
VGS = −4.0 V, ID = −42 A
11
16
mΩ
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
MIN.
S
Input Capacitance
Ciss
VDS = −10 V
7500
pF
Output Capacitance
Coss
VGS = 0 V
1800
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
430
pF
Turn-on Delay Time
td(on)
VDD = −30 V, ID = −42 A
23
ns
VGS = −10 V
16
ns
RG = 0 Ω
340
ns
160
ns
Rise Time
tr
Turn-off Delay Time
td(off)
Fall Time
tf
Total Gate Charge
QG
VDD= −48 V
188
nC
Gate to Source Charge
QGS
VGS = −10 V
30
nC
Gate to Drain Charge
QGD
ID = −83 A
48
nC
VF(S-D)
IF = 83 A, VGS = 0 V
1.0
V
Reverse Recovery Time
trr
IF = 83 A, VGS = 0 V
64
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/ µs
150
nC
Body Diode Forward Voltage
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25 Ω
D.U.T.
L
RL
PG.
50 Ω
VDD
VGS = −20 → 0 V
RG
PG.
VGS (−)
VGS
Wave Form
0
VGS
10%
90%
VDD
VDS (−)
−
IAS
90%
BVDSS
VDS
ID
VDS
Wave Form
τ
VDD
Starting Tch
τ = 1 µs
Duty Cycle ≤ 1%
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
PG.
2
IG = −2 mA
RL
50 Ω
VDD
90%
VDS
VGS (−)
0
Data Sheet D14655EJ3V0DS
10% 10%
0
td(on)
tr
ton
td(off)
tf
toff
2SJ607
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
200
100
80
60
40
20
0
0
20
40
60
80
100
120 140
160
120
80
40
0
160
0
Tch - Channel Temperature - ˚C
20
40
60
80
100
120 140
160
TC - Case Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
−1000
PW
10
0
d
−100
ite
)
on
R
(
DS
Lim
ID(DC)
1
10
µs
=
10
µs
m
s
Po
m
s
Lim we
DC
ite r Di
d ss
ipa
tio
n
−10
TC = 25˚C
Single Pulse
−1
−0.1
−1
−100
−10
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(t) - Transient Thermal Resistance - ˚C/W
ID - Drain Current - A
ID(pulse)
100
Rth(ch-A) = 83.3˚C/W
10
1
Rth(ch-C) = 0.78˚C/W
0.1
Single Pulse
0.01
10 µ
100 µ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D14655EJ3V0DS
3
2SJ607
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
−300
VGS = −10 V
−240
−100
−10
ID - Drain Current - A
ID - Drain Current - A
−1000
TA = −55˚C
25˚C
75˚C
125˚C
−1
−180
−4.5 V
−120
−4.0 V
−60
−0.1
−1
−2
VDS = −10 V
Pulsed
−5
−4
−3
0
Pulsed
−1
0
VGS - Gate to Source Voltage - V
10
TA = 125˚C
75˚C
25˚C
−55˚C
VDS = −10 V
Pulsed
−0.1
−1
−10
−100
ID - Drain Current - A
RDS(on) - Drain to Source On-state Resistance - mΩ
100
20
20
ID = −83 A
−42 A
−17 A
10
0
−2
0
−6
−4.0
16
VGS = −4.0 V
−4.5 V
−10 V
8
4
0
−1
−4
−10
−100
−10
−8
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
Pulsed
12
−5
−4
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
30
Pulsed
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
VGS(off) - Gate Cut-off Voltage - V
| yfs | - Forward Transfer Admittance - S
RDS(on) - Drain to Source On-state Resistance - mΩ
4
1000
0.1
−0.01
−3
VDS - Drain to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1
−2
−1000
VDS = −10 V
ID = −1 mA
−3.0
−2.0
−1.0
0
−50
0
50
100
Tch - Channel Temperature - ˚C
ID - Drain Current - A
Data Sheet D14655EJ3V0DS
150
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
20
Pulsed
−1000
ISD - Diode Forward Current - A
RDS(on) - Drain to Source On-state Resistance - mΩ
2SJ607
VGS = −4.0 V
−4.5 V
−10 V
16
12
8
4
0
ID = −42 A
−50
0
50
100
−100
VGS = −10 V
−4.0 V
−10
0V
−1
−0.1
150
Pulsed
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
td(on), tr, td(off), tf - Switching Time - ns
Ciss, Coss, Crss - Capacitance - pF
SWITCHING CHARACTERISTICS
10000
Ciss
Coss
1000
Crss
−1
tf
100
td(on)
10
tr
VDD = −30 V
VGS = −10 V
RG = 0 Ω
1
−0.1
−100
−10
td(off)
VGS
−6
−30
−4
−20
−10
0
0
−8
−2
VDS
40
80
120
160
0
200
IAS - Single Avalanche Current - A
−10
VDD = −48 V
−30 V
−12 V
−100
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
−1000
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
−12
−60
ID = −83 A
−50
−10
−1
ID - Drain Current - A
VDS - Drain to Source Voltage - V
−40
−2.0
1000
VGS = 0 V
f = 1 MHz
100
−0.1
−1.5
VSD - Source to Drain Voltage - V
Tch - Channel Temperature - ˚C
100000
−1.0
−0.5
0
−100
IAS = −50 A
EAS
=2
50
−10
VDD = −30 V
RG = 25 Ω
VGS = −20 → 0 V
−1
10 µ
QG - Gate Charge - nC
mJ
100 µ
1m
10 m
L - Inductive Load - H
Data Sheet D14655EJ3V0DS
5
2SJ607
SINGLE AVALANCHE ENERGY
DERATING FACTOR
Energy Derating Factor - %
160
VDD = –30 V
RG = 25 Ω
VGS = –20 → 0 V
IAS ≤ –50 A
140
120
100
80
60
40
20
0
25
50
75
100
125
150
Starting Tch - Starting Channel Temperature - ˚C
6
Data Sheet D14655EJ3V0DS
2SJ607
★ PACKAGE DRAWINGS (Unit: mm)
1) TO-220AB (MP-25)
2) TO-262 (MP-25 Fin Cut)
3.0±0.3
φ 3.6±0.2
1.0±0.5
4.8 MAX.
10.6 MAX.
10 TYP.
1.3±0.2
4
4
1
2
3
0.5±0.2
0.75±0.1
2.54 TYP.
12.7 MIN.
1.3±0.2
12.7 MIN.
6.0 MAX.
1 2 3
1.3±0.2
2.8±0.2
1.3±0.2
8.5±0.2
15.5 MAX.
5.9 MIN.
10.0 TYP.
4.8 MAX.
0.5±0.2
0.75±0.3
2.54 TYP.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2.54 TYP.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
3) TO-263 (MP-25ZJ)
4) TO-220SMD (MP-25Z)
4.8 MAX.
10 TYP.
Note
4.8 MAX.
10 TYP.
1.3±0.2
1.3±0.2
0
2.8±0.2
2.54 TYP.
1.4±0.2
TY
R
0.8
T
.
YP
0.5±0.2
0.75±0.3
2.54 TYP.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
8.5±0.2
3
3.0±0.5
0.7±0.2
2.54 TYP.
P.
.5R
2
0
.5R
P.
P.
TY
TY
R
.8
2.54 TYP. 0
2.8±0.2
1.4±0.2
1
1.1±0.4
8.5±0.2
3
5.7±0.4
2
1.0±0.5
4
1.0±0.5
4
1
2.8±0.2
2.54 TYP.
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
Note This package is produced only in Japan.
EQUIVALENT CIRCUIT
Drain
Body
Diode
Gate
Gate
Protection
Diode
Remark The diode connected between the gate and source of the transistor
serves as a protector against ESD. When this device actually used,
an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
Source
Data Sheet D14655EJ3V0DS
7
2SJ607
• The information in this document is current as of July, 2002. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
• NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
• While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
• NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4