DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3575 SWITCHING N-CHANNEL POWER MOS FET ★ ORDERING INFORMATION DESCRIPTION The 2SK3575 is N-channel MOS FET device that PART NUMBER features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES PACKAGE 2SK3575 TO-220AB 2SK3575-S TO-262 2SK3575-ZK TO-263 2SK3575-Z TO-220SMDNote Note TO-220SMD package is produced only in Japan. •4.5V drive available •Low on-state resistance RDS(on)1 = 4.5 mΩ MAX. (VGS = 10 V, ID = 42 A) •Low gate charge QG = 70 nC TYP. (VDD = 24 V, VGS = 10 V, ID = 83 A) •Avalanche capability ratings •Surface mount device available ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 30 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) ID(DC) ±83 A ID(pulse) ±332 A Total Power Dissipation (TA = 25°C) PT1 1.5 W Total Power Dissipation (TC = 25°C) PT2 105 W Drain Current (pulse) Note1 Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Note2 IAS 57 A Note2 EAS 325 mJ Single Avalanche Current Single Avalanche Energy Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16261EJ2V0DS00 (2nd edition) Date Published September 2002 NS CP(K) Printed in Japan The mark ! shows major revised points. © 2002 2SK3575 ELECTRICAL CHARACTERISTICS (TA = 25°°C) CHARACTERISTICS SYMBOL MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 10 µA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±100 nA VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.5 V | yfs | VDS = 10 V, ID = 42 A 27 RDS(on)1 VGS = 10 V, ID = 42 A 3.3 4.5 mΩ RDS(on)2 VGS = 4.5 V, ID = 42 A 4.3 6.4 mΩ Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance S Input Capacitance Ciss VDS = 10 V 3700 pF Output Capacitance Coss VGS = 0 V 1430 pF Reverse Transfer Capacitance Crss f = 1 MHz 500 pF Turn-on Delay Time td(on) VDD = 15 V, ID = 42 A 26 ns tr VGS = 10 V 27 ns td(off) RG = 10 Ω 110 ns 40 ns Rise Time Turn-off Delay Time Fall Time tf Total Gate Charge QG VDD = 24 V 70 nC Gate to Source Charge QGS VGS = 10 V 12 nC Gate to Drain Charge QGD ID = 83 A 20 nC VF(S-D) IF = 83 A, VGS = 0 V 1.0 V Reverse Recovery Time trr IF = 83 A, VGS = 0 V 61 ns Reverse Recovery Charge Qrr di/dt = 100 A/µs 94 nC Body Diode Forward Voltage ★ TEST CONDITIONS TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME D.U.T. L 50 Ω VGS RL Wave Form RG PG. VDD VGS 0 VGS 10% 90% VDD VDS 90% BVDSS IAS VDS VDS ID Starting Tch τ τ = 1 µs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE PG. 2 50 Ω 10% 0 10% Wave Form VDD D.U.T. IG = 2 mA 90% VDS VGS 0 RL VDD Data Sheet D16261EJ2V0DS td(on) tr ton td(off) tf toff 2SK3575 TYPICAL CHARACTERISTICS (TA = 25°°C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 120 120 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 100 80 60 40 20 0 0 0 25 50 75 100 125 150 175 0 25 TC - Case Temperature - °C 50 75 100 125 150 175 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA 1000 PW = 10 µs 100 100 µs I D (D C ) 10 1 ms Power Dissipation Lim ited 10 m s DC 1 T C = 25°C Single pulse 0.1 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100 rth(t) - Transient Thermal Resistance - °C/W ID - Drain Current - A ID (pulse) R DS(on) Lim ited Rth(ch-A) = 83.3°C/W 10 Rth(ch-C) = 1.19°C/W 1 0.1 Single pulse 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D16261EJ2V0DS 3 2SK3575 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 350 1000 Pulsed ID - Drain Current - A ID - Drain Current - A 300 250 V GS = 10 V 200 4.5 V 150 100 100 T ch = 150°C 75°C 25°C −55°C 10 1 0.1 50 V DS = 10 V Pulsed 0.01 0 0 0.5 1 1.5 0 2 1 VGS(off) - Gate Cut-off Voltage - V V DS = 10 V ID = 1 mA 2.5 2 1.5 1 0.5 0 0 50 100 T ch = −55°C 25°C 75°C 150°C 10 1 V DS = 10 V Pulsed 0.1 150 0.1 1 Pulsed 8 6 V GS = 4.5 V 4 10 V 2 0 1000 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ 10 100 100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 10 ID - Drain Current - A 4 10 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 10 5 100 Tch - Channel Temperature - °C 1 4 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE -50 3 VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V 3 2 Pulsed 8 6 4 ID = 42 A 2 0 0 2 4 6 8 10 12 14 16 VGS - Gate to Source Voltage - V Data Sheet D16261EJ2V0DS 18 20 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 8 1000 0 ID = 42 A Pulsed 6 Ciss, Coss, Crss - Capacitance - pF VGS = 4.5 V 4 10 V 2 C iss 1000 C o ss C rss 100 VGS = 0 V f = 1 MHz 0 10 -50 0 50 100 150 0.1 Tch - Channel Temperature - °C 10 100 VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS 1000 30 V D D = 10 V V G S = 10 V R G = 10 Ω VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns 1 t d (o ff) 100 tf t d (o n) tr 10 12 25 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ 2SK3575 10 V DD = 24 V 15 V 20 8 VGS 15 6 10 4 5 2 V DS I D = 83 A 1 0 0.1 1 10 100 0 0 20 ID - Drain Current - A 60 80 QG - Gate Change - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000 trr - Reverse Recovery Time- ns 1000 IF - Diode Forward Current - A 40 100 V G S = 10 V 0V 10 1 0.1 di/dt = 100 A/µs VGS = 0 V 100 10 pulsed 0.01 1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VF(S-D) - Source to Drain Voltage - V 0.1 1 10 100 ID - Drain Current - A Data Sheet D16261EJ2V0DS 5 2SK3575 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 120 100 Energy Derating Factor - % IAS - Single Avalanche Current - A 1000 I A S = 57 A E A S = 325 m J 10 V D D = 15 V R G =25 Ω V G S = 20→ 0 V Starting T ch = 25°C 1 0.01 100 80 60 40 20 0 0.1 1 10 L - Inductive Load - mH 6 V DD = 15 V R G = 25 Ω V GS = 20→ 0 V IAS ≤ 57 A 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - °C Data Sheet D16261EJ2V0DS 2SK3575 PACKAGE DRAWINGS (Unit: mm) TO-220AB(MP-25) 2) TO-262(MP-25 Fin Cut) φ 3.6±0.2 1.0±0.5 4.8 MAX. 10.6 MAX. 10 TYP. 1.3±0.2 4 1.3±0.2 2.54 TYP. 2.8±0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 4) TO-263(MP-25ZK) 4 1.4±0.2 0.5± 0.2 0.7±0.15 0 to 2.54 0.75±0.3 2.54 TYP. 2 8.5±0.2 1 3 P. TY P. R Y 0.5 R T .8 0 2.54 TYP. 8o 0.25 2 3 2.8±0.2 1 1.Gate 2.Drain 3.0±0.5 0.025 to 0.25 1.1±0.4 9.15±0.2 1.3±0.2 1.3±0.2 1.0±0.5 8.4 TYP. 4 2.45±0.25 0.4 8.0 TYP. No plating 4.8 MAX. 4.45±0.2 15.25±0.5 10.0±0.2 Note TO-220SMD(MP-25Z) 10 TYP. 1.35±0.3 3) 2.8±0.2 0.5±0.2 0.75±0.3 2.54 TYP. 0.5±0.2 0.75±0.1 2.54 TYP. 3 1.3±0.2 12.7 MIN. 6.0 MAX. 1 2 3 2 1.3±0.2 8.5±0.2 4 1 4.8 MAX. 12.7 MIN. 5.9 MIN. 10.0 TYP. 15.5 MAX. 1) 3.0±0.3 0.5±0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) 3.Source 2.5 ★ 4.Fin (Drain) Note This package is produced only in Japan. EQUIVALENT CIRCUIT Drain Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately Body Diode Gate degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Source Data Sheet D16261EJ2V0DS 7 2SK3575 • The information in this document is current as of September, 2002. 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