DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1740TP SWITCHING N-CHANNEL POWER MOS FET PACKAGE DRAWING (Unit: mm) DESCRIPTION The µPA1740TP is N-channel MOS FET device that features a low on-state resistance and excellent swiching characteristics, and designed for high voltage applications such as DC/DC converter. 8 5 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8, 9 : Drain 1 0.8 ±0.2 4.4 ±0.15 0.05 ±0.05 0.15 S 0.10 S 1.27 TYP. +0.10 –0.05 0.12 M 4 2.9 MAX. 2.0 ±0.2 PACKAGE Power HSOP8 8 1.1 ±0.2 0.40 1 ORDERING INFORMATION PART NUMBER µPA1740TP 6.0 ±0.3 4 5.2 +0.17 –0.2 +0.10 –0.05 1.49 ±0.21 1.44 TYP. FEATURES • High voltage: VDSS = 200 V • Gate voltage rating: ±30 V • Low on-state resistance RDS(on) = 0.44 Ω MAX. (VGS = 10 V, ID = 3.5 A) • Low input capacitance Ciss = 420 pF TYP. (VDS = 10 V, VGS = 0 V) • Built-in gate protection diode • Small and surface mount package (Power HSOP8) • Avalanche capability rated 9 4.1 MAX. 5 ABSOLUTE MAXIMUM RATINGS (TA = 25°C, Unless otherwise noted, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) VDSS 200 V Gate to Source Voltage (VDS = 0 V) VGSS ±30 V Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Note3 Single Avalanche Energy Note3 Note2 ID(DC) ±7.0 A ID(pulse) ±21 A PT1 22 W PT2 1.0 W Tch 150 °C Tstg –55 to + 150 °C IAS 7.0 A EAS 4.9 mJ Repetitive Avalanche Current Note4 IAR 7.0 A Repetitive Avalanche Energy Note4 EAR 2.2 mJ Notes 1. 2. 3. 4. EQUIVALENT CIRCUIT Drain Body Diode Gate Gate Protection Diode Source PW ≤ 10 µs, Duty Cycle ≤ 1% Mounted on a glass epoxy board (1 inch x 1 inch x 0.8 mm), PW = 10 sec Starting Tch = 25°C, VDD = 100 V, RG = 25 Ω, L = 100 µH, VGS = 20 → 0 V Tch ≤ 125°C, VDD = 100 V, RG = 25 Ω Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G15937EJ1V0DS00 (1st edition) Date Published May 2002 NS CP(K) Printed in Japan © 2001 µPA1740TP ELECTRICAL CHARACTERISTICS (TA = 25°C, Unless otherwise noted, All terminals are connected.) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 200 V, VGS = 0 V 10 µA Gate Leakage Current IGSS VGS = ±30 V, VDS = 0 V ±10 µA VGS(off) VDS = 10 V, ID = 1.0 mA 4.5 V Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance 2.5 3.5 3 4.5 | yfs | VDS = 10 V, ID = 3.5 A RDS(on) VGS = 10 V, ID = 3.5 A 0.35 S Ω 0.44 Input Capacitance Ciss VDS = 10 V 420 pF Output Capacitance Coss VGS = 0 V 100 pF Reverse Transfer Capacitance Crss f = 1 MHz 45 pF Turn-on Delay Time td(on) VDD = 100 V, ID = 3.5 A 5 ns Rise Time Turn-off Delay Time tr VGS = 10 V 7.5 ns td(off) RG = 10 Ω 21 ns 7 ns Fall Time tf Total Gate Charge QG VDD = 160 V 12 nC Gate to Source Charge QGS VGS = 10 V 2 nC Gate to Drain Charge QGD ID = 7.0 A 6.5 nC VF(S-D) IF = 7.0 A, VGS = 0 V 1.0 Reverse Recovery Time trr IF = 7.0 A, VGS = 0 V 110 ns Reverse Recovery Charge Qrr di/dt = 50 A/µs 360 nC Body Diode Forward Voltage TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V V TEST CIRCUIT 2 SWITCHING TIME D.U.T. L 50 Ω 1.5 VGS RL Wave Form RG PG. VDD VGS 0 VGS 10% 90% VDD VDS 90% BVDSS IAS VDS VDS ID Starting Tch τ τ = 1 µs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE PG. 2 50 Ω 10% 0 10% Wave Form VDD D.U.T. IG = 2 mA 90% VDS VGS 0 RL VDD Data Sheet G15937EJ1V0DS td(on) tr ton td(off) tf toff µPA1740TP TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 25 100 80 60 40 20 0 20 15 10 5 0 0 25 50 75 100 125 150 175 0 25 TC - Case Temperature - °C 50 75 100 125 150 175 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA 100 RDS(on) Limited (VGS = 10 V) 10 PW = 100 µs DC 1 ms 1 10 ms 0.1 Power Dissipation Limited T C = 25°C Single Pulse 0.01 0.1 1 10 100 1000 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(ch-A)(t) - Transient Thermal Resistance - °C/W ID - Drain Current - A ID(DC) = 7.0 A Rth(j-A) = 125°C/W 100 10 Rth(j-C) = 5.68°C/W 1 0.1 100 µ 1m 10 m 100 m 1 PW - Pulse Width - s Data Sheet G15937EJ1V0DS 10 100 1000 3 µPA1740TP DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 30 100 V DS = 10 V Pulsed Pulsed 10 20 ID - Drain Current - A ID - Drain Current - A 25 VGS = 10 V 15 10 5 1 T ch = 125°C 75°C 25°C −25°C 0.1 0.01 0.001 0 0.0001 0 5 10 15 20 25 30 0 5 VDS - Drain to Source Voltage - V VGS(off) - Gate Cut-off Voltage - V VDS = 10 V ID = 1 mA 4.0 3.5 3.0 2.5 | yfs | - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 5.0 0 25 50 75 100 125 150 1 TA = 125°C 75°C 25°C −25°C 0.1 0.1 1 10 100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE Pulsed 1.5 1 0.5 VGS = 10 V 0.1 1 10 100 ID - Drain Current - A 4 10 ID - Drain Current - A 2 0 0.01 VDS = 10 V Pulsed Tch - Channel Temperature - °C RDS(on) - Drain to Source On-state Resistance - Ω RDS(on) - Drain to Source On-state Resistance - Ω -25 100 0.01 0.01 2.0 -50 15 VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 4.5 10 1 Pulsed 0.9 0.8 0.7 ID = 7.0 A 3.5 A 1.4 A 0.6 0.5 0.4 0.3 0.2 0.1 0 0 2 4 6 8 10 12 14 16 18 20 VGS - Gate to Source Voltage - V Data Sheet G15937EJ1V0DS µPA1740TP CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 1000 1.4 VGS = 10 V Pulsed 1.2 1 ID = 7.0 A 0.8 Ciss Ciss, Coss, Crss - Capacitance - pF 0.6 3.5 A 0.4 100 Coss Crss 10 0.2 VGS = 0 V f = 1 MHz 0 1 -50 -25 0 25 50 75 100 125 0.1 150 Tch - Channel Temperature - °C 10 100 1000 VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS 12 240 100 VDD = 100 V VGS = 10 V RG = 0 Ω VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns 1 td(off) 10 tr tf td(on) ID = 7.0 A V DD = 160 V 100 V 40 V 220 200 180 10 160 8 140 120 6 V GS 100 80 4 60 40 2 V DS 20 0 1 0.1 1 10 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - Ω DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 100 QG - Gate Charge - nC ID - Drain Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 100 trr - Reverse Recovery Diode - ns IF - Diode Forward Current - A Pulsed 10 1 VGS = 0 V 0.1 100 10 VGS = 0 V di/dt = 100 A/ µs 1 0.01 0 0.25 0.5 0.75 1 1.25 1.5 VSD - Source to Drain Voltage - V Data Sheet G15937EJ1V0DS 0.1 1 10 100 IF - Diode Forward Current - A 5 µPA1740TP SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 100 10 IAS = 7.0 A EAS = 4.9 mJ 1 VDD = 100 V RG = 25 Ω VGS = 20 → 0 V Starting Tch = 25°C 0.1 0.01 60 40 20 0 0.1 1 10 L - Inductive Load - mH 6 VDD = 100 V RG = 25 Ω VGS = 20 → 0 V IAS ≤ 7.0 A 80 Energy Derating Factor - % IAS - Single Avalanche Current - A 100 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - °C Data Sheet G15937EJ1V0DS µPA1740TP [MEMO] Data Sheet G15937EJ1V0DS 7 µPA1740TP • The information in this document is current as of May, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. • NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4