DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1970 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit: mm) The µ PA1970 is a switching device which can be driven directly by a 2.5 V power source. The device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 0.16+0.1 –0.06 FEATURES • 2.5 V drive available • Low on-state resistance RDS(on)1 = 69 mΩ MAX. (VGS = 4.5 V, ID = 1.0 A) RDS(on)2 = 72 mΩ MAX. (VGS = 4.0 V, ID = 1.0 A) RDS(on)3 = 107 mΩ MAX. (VGS = 2.5 V, ID = 1.0 A) 6 5 4 1 2 3 1.5 2.8 ±0.2 +0.1 0.65–0.15 0.32 +0.1 –0.05 0 to 0.1 0.95 0.65 0.95 1.9 0.9 to 1.1 2.9 ±0.2 ORDERING INFORMATION PART NUMBER µ PA1970TE 6: 1: 5: PACKAGE Note SC-95 (Mini Mold Thin Type) Drain 1 Gate 1 Source 1 4: 3: 2: Drain 2 Gate 2 Source 2 Note Marking: TT ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 20 V Gate to Source Voltage (VDS = 0 V) VGSS ±12 V Drain Current (DC) (TA = 25°C) Drain Current (pulse) Note1 Total Power Dissipation (2 units) (TA = 25°C) Total Power Dissipation (1 unit) (TA = 25°C) Note2 Note2 EQUIVALENT CIRCUITS Drain 1 ID(DC) ±2.2 A ID(pulse) ±8.8 A Gate 1 PT1 1.15 W Gate Protection Diode PT2 0.57 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Drain 2 Body Diode Gate Protection Diode Source 1 Body Diode Gate 2 Source 2 Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2 2. Mounted on FR-4 board of 5000 mm x 1.1 mm, t ≤ 5 sec. Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G15934EJ1V0DS00 (1st edition) Date Published September 2002 NS CP(K) Printed in Japan © 2001 µ PA1970 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 10 µA Gate Leakage Current IGSS VGS = ±12 V, VDS = 0 V ±10 µA VGS(off) VDS = 10 V, ID = 1.0 mA 0.5 0.97 1.5 V | yfs | VDS = 10 V, ID = 1.0 A 1.0 3.3 RDS(on)1 VGS = 4.5 V, ID = 1.0 A 55 69 mΩ RDS(on)2 VGS = 4.0 V, ID = 1.0 A 57 72 mΩ RDS(on)3 VGS = 2.5 V, ID = 1.0 A 80 107 mΩ Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance S Input Capacitance Ciss VDS = 10 V 160 pF Output Capacitance Coss VGS = 0 V 60 pF Reverse Transfer Capacitance Crss f = 1.0 MHz 40 pF Turn-on Delay Time td(on) VDD = 10 V, ID = 1.0 A 17 ns tr VGS = 4.0 V 90 ns td(off) RG = 10 Ω 100 ns 120 ns Rise Time Turn-off Delay Time Fall Time tf Total Gate Charge QG VDD = 16 V 2.3 nC Gate to Source Charge QGS VGS = 4.0 V 0.5 nC Gate to Drain Charge QGD ID = 2.2 A 1.1 nC IF = 2.2 A, VGS = 0 V 0.85 V Body Diode Forward Voltage VF(S-D) TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. VGS RL VGS RG PG. Wave Form VDD 0 VGS 10% PG. 90% τ τ = 1 µs Duty Cycle ≤ 1% 2 90% VDS VDS 10% 0 10% Wave Form td(on) tr ton RL 50 Ω VDD 90% VDS VGS(−) 0 IG = −2 mA td(off) tf toff Data Sheet G15934EJ1V0DS µ PA1970 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 1.2 100 80 60 40 20 Mounted on FR-4 board of 2 5000 mm x 1.1 m m, t ≤ 5 sec. 1 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 120 0.8 2 units 0.6 1 unit 0.4 0.2 0 0 0 25 50 75 100 125 150 175 0 TA - Ambient Temperature - °C 25 50 75 100 125 150 175 TA - Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA 100 PW = 1 ms R DS(on) limited (V GS = 4.5 V) 100 ms ID(DC) 5 s(2 units) 5 s(1 unit) 1 0.1 0.01 Single pulse Mounted on FR-4 board of 2 5000 mm x 1.1 mm 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(ch-A) - Transient Thermal Resistance - °C/W ID - Drain Current - A 10 ms ID(pulse) 10 1000 PD(FET1) : PD(FET2) = 1:0 100 PD(FET1) : PD(FET2) = 1:1 10 Single pulse Mounted on FR-4 board of 2 5000 mm x 1.1 mm 1 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet G15934EJ1V0DS 3 µ PA1970 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 10 10 Pulsed 4.0 V ID - Drain Current - A ID - Drain Current - A 1 V GS = 4.5 V 8 6 4 2.5 V 2 0.1 0.01 T A = 1 25°C 75°C 25°C − 25°C 0.001 0.0001 0.00001 0 0 0.1 0.2 0.3 0.4 0.5 0 0.6 VDS - Drain to Source Voltage - V 0.5 2 2.5 10 1.1 | yfs | - Forward Transfer Admittance - S V DS = 10 V ID = 1.0 mA 1 0.9 0.8 0.7 0.6 -50 0 50 100 150 V DS = 10 V Pulsed 1 T A = 125°C 75°C 25°C −25°C 0.1 0.01 0.01 0.1 Tch - Channel Temperature - °C ID = 1.0 A Pulsed V GS = 2.5 V 4.0 V 80 4.5 V 40 0 -50 0 50 100 10 150 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mΩ 160 120 1 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-state Resistance - mΩ 1.5 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 1.2 Tch - Channel Temperature - °C 4 1 VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate Cut-off Voltage - V V D S = 10 V P uls ed 160 ID = 1.0 A Pulsed 120 80 40 0 0 2 4 6 8 10 VGS - Gate to Source Voltage - V Data Sheet G15934EJ1V0DS 12 µ PA1970 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 160 V GS = 4.5 V Pulsed 120 T A = 125°C 75°C 80 40 25°C −25°C 0 0.01 0.1 1 10 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 160 V GS = 4.0 V Pulsed 120 T A = 125°C 75°C 80 40 25°C −25°C 0 0.01 0.1 ID - Drain Current - A SWITCHING CHARACTERISTICS 160 1000 V G S = 2.5 V Pulsed td(on), tr, td(off), tf - Switching Time - ns RDS(on) - Drain to Source On-state Resistance - mΩ 10 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT T A = 125°C 75°C 120 80 25°C −25°C 40 V DD = 10 V V GS = 4.0 V R G = 10 Ω td(off) 100 tf tr td(on) 0 10 0.01 0.1 1 10 0.1 1 ID - Drain Current - A 10 ID - Drain Current - A CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SOURCE TO DRAIN DIODE FORWARD VOLTAGE 10 1000 V GS = 0 V f = 1.0 MH z V GS = 0 V Pulsed IF - Diode Forward Current - A Ciss, Coss, Crss - Capacitance - pF 1 C iss 100 C oss C rss 10 1 0.1 0.01 0.1 1 10 100 VDS - Drain to Source Voltage - V 0.4 0.6 0.8 1 1.2 VF(S-D) - Source to Drain Voltage - V Data Sheet G15934EJ1V0DS 5 µ PA1970 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 5 VGS - Gate to Source Voltage - V ID = 2.2 A VDD = 10 V 16 V 4 3 2 1 0 0 0.5 1 1.5 2 2.5 3 QG - Gate Charge - nC 6 Data Sheet G15934EJ1V0DS µ PA1970 [MEMO] Data Sheet G15934EJ1V0DS 7 µ PA1970 • The information in this document is current as of September, 2002. 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