NEC UPA1911A

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1911A
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
PACKAGE DRAWING (Unit : mm)
DESCRIPTION
+0.1
0.65–0.15
• Can be driven by a 2.5 V power source
• Low on-state resistance
RDS(on)1 = 115 mΩ MAX. (VGS = –4.5 V, ID = –1.5 A)
RDS(on)2 = 120 mΩ MAX. (VGS = –4.0 V, ID = –1.5 A)
RDS(on)3 = 190 mΩ MAX. (VGS = –2.5 V, ID = –1.0 A)
µPA1911ATE
5
4
1
2
3
0 to 0.1
0.65
0.95
1.9
0.9 to 1.1
2.9 ±0.2
1, 2, 5, 6 : Drain
3
: Gate
4
: Source
PACKAGE
Note
6
0.95
ORDERING INFORMATION
PART NUMBER
0.16+0.1
–0.06
1.5
FEATURES
0.32 +0.1
–0.05
2.8 ±0.2
The µPA1911A is a switching device which can be driven
directly by a 2.5 V power source.
The µPA1911A features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such as
power switch of portable machine and so on.
SC-95 (Mini Mold Thin Type)
Note Marking: TK
EQUIVALENT CIRCUIT
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain
Drain to Source Voltage (VGS = 0 V)
VDSS
–20
V
Gate to Source Voltage (VDS = 0 V)
VGSS
V
A
ID(pulse)
# 12
# 2.5
# 10
PT1
0.2
W
PT2
2
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Drain Current (DC)
Drain Current (pulse)
ID(DC)
Note1
Total Power Dissipation
Total Power Dissipation (TA = 25°C)
Note2
A
Body
Diode
Gate
Gate
Protection
Diode
Source
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on FR-4 board, t ≤ 5 sec.
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
G15044EJ1V0DS00 (1st edition)
Date Published April 2001 NS CP(K)
Printed in Japan
©
2001
µ PA1911A
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = –20 V, VGS = 0 V
–10
µA
Gate Leakage Current
IGSS
VGS = ±12 V, VDS = 0 V
# 10
µA
VGS(off)
VDS = –10 V, ID = –1 mA
–0.5
–1.0
–1.5
V
| yfs |
VDS = –10 V, ID = –1.5 A
1
5.4
RDS(on)1
VGS = –4.5 V, ID = –1.5 A
82
115
mΩ
RDS(on)2
VGS = –4.0 V, ID = –1.5 A
86
120
mΩ
RDS(on)3
VGS = –2.5 V, ID = –1.0 A
122
190
mΩ
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
S
Input Capacitance
Ciss
VDS = –10 V
370
pF
Output Capacitance
Coss
VGS = 0 V
110
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
40
pF
Turn-on Delay Time
td(on)
VDD = –10 V, ID = –1.5 A
130
ns
VGS = –4.0 V
230
ns
RG = 10 Ω
470
ns
380
ns
Rise Time
tr
Turn-off Delay Time
td(off)
Fall Time
tf
Total Gate Charge
QG
VDD = –10 V
2.3
nC
Gate to Source Charge
QGS
ID = –2.5 A
1.0
nC
Gate to Drain Charge
QGD
VGS = –4.0 V
1.0
nC
VF(S-D)
IF = 2.5 A, VGS = 0 V
0.84
V
Reverse Recovery Time
trr
IF = 2.5 A, VGS = 0 V
14
ns
Reverse Recovery Charge
Qrr
di/dt = 10 A / µs
1.4
nC
Body Diode Forward Voltage
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
RL
RG
RG = 10 Ω
PG.
VGS
VGS
Wave Form
0
PG.
90%
90%
ID
VGS
0
ID
Wave Form
τ
τ = 1µ s
Duty Cycle ≤ 1%
10%
0 10%
tr
td(on)
ton
RL
50 Ω
VDD
90%
VDD
ID
2
VGS(on)
10%
IG = 2 mA
td(off)
tf
toff
Data Sheet G15044EJ1V0DS
µ PA1911A
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
80
−10
ID - Drain Current - A
dT - Derating Factor - %
100
FORWARD BIAS SAFE OPERATING AREA
−100
60
40
(o
DS
−0.1
−0.01
−0.1
150
−100
VGS = −4.0V
VGS(off) - Gate to Source Cut-off Voltage - V
ID - Drain Current - A
−4
VGS = −2.5V
−0.2
−0.4
−0.6
−0.8
VDS - Drain to Source Voltage - V
−1.5
−1.0
−10.0
VDS - Drain to Source Voltage - V
TA = +125°C
−0.1
TA = +75°C
−0.01
TA = +25°C
−0.001
TA = −25°C
−0.0001
−1.0
−0.00001
0.0
−0.5
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
VDS = −10 V
ID = −1 mA
−1.0
−0.5
−50
Tch
0
50
100
- Channel Temperature - °C
−100.0
VDS = −10 V
−1
| yfs | - Forward Transfer Admittance - S
ID - Drain Current - A
VGS = −4.5V
0.0
ms
10
0m
DC s
−10
−8
0
10
FORWARD TRANSFER CHARACTERISTICS
−10
−2
1m
s
ID(DC)
Single Pulse
Mounted on 2500mm2 x 35 µm Copper Pad
Connected to Drain Electrode
in 50 mm x 50 mm x 1.6 mm FR-4 Board
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
−6
ID(pulse)
−1
0
30
60
90
120
TA - Ambient Temperature - °C
d
ite V)
.5
R V
(@
20
0
im
n)L −4
=
GS
100.00
−1.0
−1.5
−2.0
−2.5
VGS - Gate to Sorce Voltage - V
−3.0
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
VDS = −10 V
TA = +25°C
10.00
150
TA = −25°C
1.00
0.10
0.01
−0.01
TA = +75°C
TA = +125°C
−0.10
−1.00
−10.00
−100.00
ID - Drain Current - A
Data Sheet G15044EJ1V0DS
3
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
300
VGS = −2.5 V
TA = +75°C
250
TA = +125°C
200
150
100
TA = +25°C
50
TA = −25°C
0
−0.01
−0.10
−1.00
−10.00
−100.00
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
200
RDS(on) - Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-state Resistance - mΩ
µ PA1911A
VGS = −4.0 V
TA = +125°C
150
TA = +75°C
100
50
0
−0.01
−0.10
VGS = −4.5 V
TA = +125°C
TA = +75°C
100
0
−0.01
TA = +25°C
TA = −25°C
−0.10
−1.00
−10.00
−100.00
VGS = −2.5 V
150
100
50
VGS = −4.5 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
200
−50
100
50
−2.0
−4.0
−6.0
−8.0 −10.0
VGS - Gate to Source Voltage - V
50
100
0
Tch - Channel Temperature - °C
150
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1000
ID = −1.5 A
150
VGS = −4.0 V
0
Ciss, Coss, Crss - Capacitance - pF
RDS(on) - Drain to Source On-state Resistance - mΩ
4
−100.00
ID = −1.5 A
ID - Drain Current - A
0
0.0
−10.00
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
200
RDS(on) - Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
200
50
−1.00
ID - Drain Current - A
ID - Drain Current - A
150
TA = +25°C
TA = −25°C
−12.0
Data Sheet G15044EJ1V0DS
f = 1MHZ
VGS = 0V
Ciss
100
Coss
Crss
10
−0.1
−1.0
−10.0
VDS - Drain to Source Voltage - V
−150
µ PA1911A
SOURCE TO DRAIN FORWARD VOLTAGE
SWITCHING CHARACTERISTICS
100.00
IF - Source to Drain Current - A
tf
td(off)
tr
td(on)
100.00
VDD = −10 V
VGS = −4.0 V
RG = 10 Ω
10.00
−0.10
VGS = 0 V
10.00
1.00
0.10
0.01
−1.00
−10.00
0.4
0.6
0.8
1.0
1.2
VF(S-D) - Body Diode Forward Voltage - V
ID - Drain Current - A
DYNAMIC INPUT CHARACTERISTICS
−4
ID = −2.5 A
−3
VDD = −16 V
VDD = −10 V
−2
VDD = −6 V
−1
0
0
0.5
1
1.5
2
2.5
3
QG Gate Charge - nC
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(ch - A) - Transient Thermal Resistance - °C/W
VGS - Gate to Source Voltage - V
td(on), tr, td(off). tf - Switching Time - ns
1000.00
Single Pulse
Without Board
100
10
Mounted on 2500mm2 x 35 µ m Copper Pad
Connected to Drain Electrode
in 50 mm x 50 mm x 1.6 mm FR-4 Board
1
0.1
0.0001
0.001
0.01
0.1
1
10
100
1000
PW - Pulse Width - s
Data Sheet G15044EJ1V0DS
5
µ PA1911A
[MEMO]
6
Data Sheet G15044EJ1V0DS
µ PA1911A
[MEMO]
Data Sheet G15044EJ1V0DS
7
µ PA1911A
• The information in this document is current as of April, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
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third parties by or arising from the use of NEC semiconductor products listed in this document or any other
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agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
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The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
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M8E 00. 4