DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3296 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3296 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES PART NUMBER PACKAGE 2SK3296 TO-220AB 2SK3296-S TO-262 2SK3296-ZK TO-263(MP-25ZK) 2SK3296-ZJ TO-263(MP-25ZJ) • 4.5 V drive available • Low on-state resistance RDS(on)1 = 12 mΩ MAX. (VGS = 10 V, ID = 18 A) • Low gate charge QG = 30 nC TYP. (ID = 35 A, VDD = 16 V, VGS = 10 V) • Built-in gate protection diode • Surface mount device available ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 20 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) ID(DC) ±35 A ID(pulse) ±140 A Drain Current (Pulse) Note Total Power Dissipation (TA = 25°C) PT1 1.5 W Total Power Dissipation (TC = 25°C) PT2 40 W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Note PW ≤ 10 µs, Duty Cycle ≤ 1% The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14063EJ2V0DS00 (2nd edition) Date Published May 2001 NS CP(K) Printed in Japan The mark shows major revised points. © 1999, 2000 2SK3296 ELECTRICAL CHARACTERISTICS(TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Drain Leakage Current IDSS VDS = 20 V, VGS = 0 V 10 µA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA Gate Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 1.0 2.5 V Forward Transfer Admittance | yfs | VDS = 10 V, ID = 18 A 9.0 Drain to Source On-state Resistance RDS(on)1 VGS = 10 V, ID = 18 A 8.5 12 mΩ RDS(on)2 VGS = 4.5 V, ID = 18 A 12 19 mΩ Input Capacitance Ciss VDS = 10 V 1300 pF Output Capacitance Coss VGS = 0 V 570 pF Reverse Transfer Capacitance Crss f = 1 MHz 300 pF Turn-on Delay Time td(on) VDD = 10 V , ID = 18 A 70 ns Rise Time tr VGS(on) = 10 V 1220 ns Turn-off Delay Time td(off) RG = 10 Ω 100 ns Fall Time tf 180 ns Total Gate Charge QG VDD = 16 V 30 nC Gate to Source Charge QGS VGS = 10 V 4.5 nC Gate to Drain Charge QGD ID = 35 A 8.0 nC Diode Forward Voltage VF(S-D) IF = 35 A, VGS = 0 V 1.0 V Reverse Recovery Time trr IF = 35 A, VGS = 0 V 35 ns Reverse Recovery Charge Qrr di/dt = 100 A/µs 23 nC TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL RG PG. VGS VGS Wave Form 0 PG. VDD ID 90% 90% 10% 0 10% Wave Form τ = 1 µs Duty Cycle ≤ 1% tr td(off) td(on) ton IG = 2 mA RL 50 Ω VDD 90% ID τ 2 VGS(on) 10% ID VGS 0 S tf toff Data Sheet D14063EJ2V0DS 2SK3296 TYPICAL CHARACTERISTICS (TA = 25°C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 1000 160 100 VGS =10 V 120 7.0 V 100 4.5 V 80 Tch = −50˚C −25˚C 25˚C 75˚C 125˚C 1 150˚C ID - Drain Current - A ID - Drain Current - A 140 60 40 10 0.1 0.01 20 Pulsed 0 0 3 2 1 0.001 0 1 1.5 1.0 0.5 0 50 100 150 | yfs | - Forward Transfer Admittance - S VGS(off) - Gate to Source Cut-off Voltage - V VDS = 10 V ID = 1 mA 2.0 0 −50 100 Tch = −50˚C −25˚C 25˚C 75˚C 10 150˚C 1 0.1 0.1 1 50 Pulsed ID = 28 A 18 A 30 7A 20 10 0 5 10 15 VGS - Gate to Source Voltage - V 20 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 0 10 VDS = 10 V Pulsed 100 ID - Drain Current - A Tch - Channel Temperature - ˚C 40 6 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 2.5 3 VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V 3.0 2 VDS = 10 V Pulsed 4 5 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 50 Pulsed 40 30 20 VGS = 4.5 V 7.0 V 10 V 10 Data Sheet D14063EJ2V0DS 0 1 10 100 1000 ID - Drain Current - A 3 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 25 ID = 18 A Pulsed 20 VGS = 4.5 V 15 7.0 V 10 V 5 0 −50 0 100 50 1000 Pulsed VGS = 10 V 100 4.5 V 10 0V 1 0.1 0.01 150 0 Tch - Channel Temperature - ˚C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE VGS = 0 V f = 1 MHz Ciss 1000 Coss Crss 100 0.1 1 0.4 10 td(off) td(on) VDD = 10 V VGS = 10 V RG = 10 Ω 100 10 5 0.1 10 1 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 10 100 16 20 VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - ns 1.6 tr 100 ID = 35 A 12 15 VDD = 16 V 10 V 4V 8 10 VGS 5 4 VDS 0 0 10 20 30 QG - Gate Charge - nC ISD - Diode Forward Current - A 4 1.4 ID - Drain Current - A 100 10 1.2 tf 100 di/dt = 100 A/µs VGS = 0 V 1 1 1000 REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1 0.1 0.8 10000 VDS - Drain to Source Voltage - V 1000 0.6 SWITCHING CHARACTERISTICS td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF 10000 0.2 VSD - Source to Drain Voltage - V Data Sheet D14063EJ2V0DS 40 0 VGS - Gate to Source Voltage - V 10 SOURCE TO DRAIN DIODE FORWARD VOLTAGE ISD - Diode Forward Current - A RDS(on) - Drain to Source On-state Resistance - mΩ 2SK3296 2SK3296 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 50 100 80 60 40 20 0 0 20 40 60 80 120 140 100 40 30 20 10 0 0 160 20 40 Tch - Channel Temperature - ˚C 60 80 100 120 140 160 TC - Case Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA ID(pulse) PW 30 10 0 = 10 µs s 0 s µ d ite ) im 0V 1 )L n = o S( S RD VG ID(DC) (@ 100 µ 1m Po we rD iss 3 10 ms m s ipa 10 tio n s Lim ite d DC TC = 25°C Single Pulse 1 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - ˚C/W ID - Drain Current - A 1000 100 Rth(ch-A) = 83.3˚C/W 10 Rth(ch-C) = 3.13˚C/W 1 0.1 Single Pulse 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - sec Data Sheet D14063EJ2V0DS 5 2SK3296 PACKAGE DRAWINGS (Unit : mm) 2)TO-262 4.8 MAX. 10.6 MAX. (10) φ 3.6±0.2 1.3±0.2 4.8 MAX. 1.3±0.2 15.5 MAX. 5.9 MIN. 4 1 1 2 3 3 12.7 MIN. 6.0 MAX. 1.3±0.2 1.3±0.2 2.54 TYP. 2.8±0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 4)TO-263 (MP-25ZJ) 1.35±0.3 3)TO-263 (MP-25ZK) 10.0±0.2 0.4 8.4 TYP. 4 4.8 MAX. (10) 4.45±0.2 1.3±0.2 1.3±0.2 0.5± 0.7±0.15 0.2 0 to 2.54 5.7±0.4 8.5±0.2 1.0±0.5 0.025 to 0.25 2.45±0.25 9.15±0.2 15.25±0.5 4 8.0 TYP. No plating 1.4±0.2 0.7±0.2 2.54 TYP. 1 2 3 2.54 TYP. 2 3 2.8±0.2 1.Gate 2.Drain 3.Source 2.5 ) .5R (0 ) .8R (0 0.5±0.2 8o 0.25 1 2.8±0.2 0.5±0.2 0.75±0.3 2.54 TYP. 0.5±0.2 0.75±0.1 2.54 TYP. 2 8.5±0.2 4 10.0 12.7 MIN. 3.0±0.3 1.0±0.5 1)TO-220AB (MP-25) 4.Fin (Drain) 1.Gate 2.Drain 3.Source 4.Fin (Drain) EQUIVALENT CIRCUIT Remark Drain The diode connected between the gate and source of the transistor serves as a protector against ESD. Body Diode Gate When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Gate Protection Diode 6 Source Data Sheet D14063EJ2V0DS 2SK3296 [MEMO] Data Sheet D14063EJ2V0DS 7 2SK3296 • The information in this document is current as of May, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. 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