DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3571 SWITCHING N-CHANNEL POWER MOS FET ★ DESCRIPTION ORDERING INFORMATION The 2SK3571 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, PART NUMBER PACKAGE 2SK3571 TO-220AB 2SK3571-S TO-262 2SK3571-ZK TO-263 designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES TO-220SMD 2SK3571-Z •4.5V drive available. Note Note TO-220SMD package is produced only in Japan. •Low on-state resistance, RDS(on)1 = 9.0 mΩ MAX. (VGS = 10 V, ID = 24 A) •Low gate charge QG = 21 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 48 A) •Built-in gate protection diode •Surface mount device available ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 20 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) ID(DC) ±48 A ID(pulse) ±192 A Total Power Dissipation (TA = 25°C) PT1 1.5 W Total Power Dissipation (TC = 25°C) PT2 40 W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Drain Current (pulse) Note Note PW ≤ 10 µs, Duty Cycle ≤ 1% The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16257EJ2V0DS00 (2nd edition) Date Published September 2002 NS CP (K) Printed in Japan The mark ! shows major revised points. © 2002 2SK3571 ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristics Symbol MIN. TYP. MAX. Unit Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 10 µA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.5 V | yfs | VDS = 10 V, ID = 24 A 11 RDS(on)1 VGS = 10 V, ID = 24 A 7.0 9.0 mΩ RDS(on)2 VGS = 4.5 V, ID = 18 A 10 16 mΩ Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance S Input Capacitance Ciss VDS = 10 V 1100 pF Output Capacitance Coss VGS = 0 V 450 pF Reverse Transfer Capacitance Crss f = 1 MHz 160 pF Turn-on Delay Time td(on) VDD = 10 V, ID = 24 A 13 ns tr VGS = 10 V 5 ns td(off) RG = 10 Ω 40 ns 9 ns Rise Time Turn-off Delay Time Fall Time tf Total Gate Charge QG VDD = 16 V 21 nC Gate to Source Charge QGS VGS = 10 V 4.2 nC Gate to Drain Charge QGD ID = 48 A 5 nC Body Diode Forward Voltage ★ Test Conditions VF(S-D) IF = 48 A, VGS = 0 V 1.0 V Reverse Recovery Time trr IF = 48 A, VGS = 0 V 41 ns Reverse Recovery Charge Qrr di/dt = 100 A/µs 27 nC TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. VGS RL VGS RG PG. Wave Form VDD 0 VGS 10% PG. 90% τ τ = 1 µs Duty Cycle ≤ 1% 2 90% VDS VDS 10% 0 10% Wave Form td(on) tr ton RL 50 Ω VDD 90% VDS VGS 0 IG = 2 mA td(off) tf toff Data Sheet D16257EJ2V0DS 2SK3571 TYPICAL CHARACTERISTICS (TA = 25°°C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 120 50 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 40 30 20 10 0 0 0 25 50 75 100 125 150 175 0 25 TC - Case Temperature - °C 50 75 100 125 150 175 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA 1000 ID(pulse) PW = 10 µs R DS(on) limited 100 100 µs 10 DC ID(DC) 1 ms Power dissipation limited 10 m s 1 T C = 25°C Single pulse 0.1 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - °C/W ID - Drain Current - A ★ 100 Rth(ch-A) = 83.3°C/W 10 Rth(ch-C) = 3.13°C/W 1 0.1 Single pulse 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D16257EJ2V0DS 3 2SK3571 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 200 1000 ID - Drain Current - A ID - Drain Current - A V DS = 10 V Pulsed V GS = 10 V 150 100 4.5 V 100 10 T ch = 150°C 75°C 25°C −55°C 1 50 0.1 Pulsed 0 0.01 0 0.5 1 1.5 2 2.5 3 0 1 VDS - Drain to Source Voltage - V | yfs | - Forward Transfer Admittance - S VGS(off) - Gate Cut-off Voltage - V V DS = 10 V ID = 1 mA 5 6 2 1.5 1 0.5 100 10 T ch = 150°C 75°C 25°C −55°C 1 V DS = 10 V Pulsed 0 0.1 -50 0 50 100 150 0.1 Tch - Channel Temperature - °C DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 25 Pulsed 20 15 V GS = 4.5 V 10 10 V 5 0 1 10 100 1 10 100 ID - Drain Current - A 1000 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ 4 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 3 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 25 Pulsed 20 15 ID = 24 A 10 ID - Drain Current - A 4 3 VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 2.5 2 Data Sheet D16257EJ2V0DS 5 0 0 5 10 15 VGS - Gate to Source Voltage - V 20 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 20 10000 Ciss, Coss, Crss - Capacitance - pF 15 V GS = 4.5 V 10 10 V 5 1000 C oss C rss 100 ID = 24 A Pulsed VGS = 0 V f = 1 MHz 10 0.01 0 -50 0 50 100 150 0.1 1 10 100 VDS - Drain to Source Voltage - V Tch - Channel Temperature - °C SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS 10 00 20 V D D = 10 V V G S = 10 V R G = 10 Ω VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns C iss 10 0 t d (o ff) tf t d (o n ) 10 tr 10 V DD = 16 V 10 V 16 8 12 6 V GS 8 4 4 2 ID = 48 A V DS 1 0.1 1 10 0 10 0 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ 2SK3571 0 0 ID - Drain Current - A 5 10 15 20 25 QG - Gate Change - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000 1000 trr - Reverse Recovery Time- ns IF - Diode Forward Current - A Pulsed 100 V GS = 10 V 10 0V 1 0.1 100 10 di/dt = 100 A/µs VGS = 0 V 1 0.01 0 0.4 0.8 1.2 1.6 VF(S-D) - Source to Drain Voltage - V Data Sheet D16257EJ2V0DS 0.1 1 10 100 ID - Drain Current - A 5 2SK3571 ★ PACKAGE DRAWINGS (Unit: mm) 1) TO-220AB (MP-25) φ 3.6±0.2 1.0±0.5 4.8 MAX. 10.6 MAX. 3.0±0.3 2) TO-262 (MP-25 Fin Cut) 10 TYP. 1.3±0.2 4 1 1 2 3 2.54 TYP. 2.8±0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) 6.0 MAX. 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 4) TO-220SMD (MP-25Z) 3) TO-263 (MP-25ZK) 1.4±0.2 0.5± 0.2 0.75±0.3 2.54 TYP. 8.5±0.2 2 3 P. TY P. R Y 0.5 R T .8 0 2.54 TYP. 8o 2 2.8±0.2 0.25 1 3 1.Gate 2.Drain 3.0±0.5 1 1.1±0.4 0.025 to 0.25 0 to 2.54 4 1.0±0.5 9.15±0.2 0.7±0.15 1.3±0.2 1.3±0.2 2.45±0.25 8.4 TYP. 4 4.8 MAX. 10 TYP. 1.35±0.3 0.4 8.0 TYP. No plating Note 4.45±0.2 15.25±0.5 10.0±0.2 2.8±0.2 0.5±0.2 0.75±0.3 2.54 TYP. 0.5±0.2 0.75±0.1 2.54 TYP. 3 1.3±0.2 12.7 MIN. 1.3±0.2 2 12.7 MIN. 4 1.3±0.2 8.5±0.2 15.5 MAX. 5.9 MIN. 10.0 TYP. 4.8 MAX. 0.5±0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.5 3.Source 4.Fin (Drain) Note This package is produced only in Japan. EQUIVALENT CIRCUIT Remark Drain The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding Body Diode Gate Gate Protection Diode 6 the rated voltage may be applied to this device. Source Data Sheet D16257EJ2V0DS 2SK3571 [MEMO] Data Sheet D16257EJ2V0DS 7 2SK3571 • The information in this document is current as of September, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. 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