DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2451 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION 0.5±0.1 6 2 5 3 4 0.25 +0.1 −0.05 1 1.85±0.1 PACKAGE DRAWING (Unit : mm) The µPA2451 is a switching device which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2.5 V drive available • Low on-state resistance RDS(on)1 = 20 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A) RDS(on)2 = 21 mΩ MAX. (VGS = 4.0 V, ID = 4.0 A) RDS(on)3 = 25 mΩ MAX. (VGS = 3.1 V, ID = 4.0 A) RDS(on)4 = 32 mΩ MAX. (VGS = 2.5 V, ID = 4.0 A) • Built-in G-S protection diode against ESD 0.145±0.05 5.0±0.1 0.8 MAX. 4.4±0.1 0.05 +0 −0.05 7 (0.9) (1.45) ORDERING INFORMATION PART NUMBER PACKAGE µPA2451TL 6PIN HWSON (4521) (0.15) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS Gate to Source Voltage (VDS = 0 V) VGSS Drain Current (DC) (TA = 25°C) ID(DC) Note1 Drain Current (pulse) ID(pulse) Note2 Total Power Dissipation (2unit) PT1 Note3 Total Power Dissipation (2unit) PT2 Channel Temperature Tch Storage Temperature Tstg 30 ±12 ±8.2 ±80 2.5 0.7 150 –55 to +150 Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. TA = 25°C Mounted on ceramic board 3. TA = 25°C Mounted on FR4 board (3.05) V V A A W W °C °C 1,2: Source 1 3: Gate 1 7: Drain (0.50) 5,6: Source 2 4: Gate 2 EQUIVALENT CIRCUIT Drain1 Gate1 Drain2 Body Diode Gate Protection Diode Source1 Body Diode Gate2 Gate Protection Diode Source2 Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G15621EJ1V0DS00 (1st edition) Date Published March 2002 NS CP(K) Printed in Japan © 2001 µ PA2451 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 10 µA Gate Leakage Current IGSS VGS = ±12 V, VDS = 0 V ±10 µA VGS(off) VDS = 10 V, ID = 1.0 mA 0.5 1.5 V | yfs | VDS = 10 V, ID = 4.0 A 5.0 RDS(on)1 VGS = 4.5 V, ID = 4.0 A 12 16 20 mΩ RDS(on)2 VGS = 4.0 V, ID = 4.0 A 12.5 16.5 21 mΩ RDS(on)3 VGS = 3.1 V, ID = 4.0 A 14 18.5 25 mΩ RDS(on)4 VGS = 2.5 V, ID = 4.0 A 15.5 22.5 32 mΩ Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance 1.0 S Input Capacitance Ciss VDS = 10 V 540 pF Output Capacitance Coss VGS = 0 V 150 pF Reverse Transfer Capacitance Crss f = 1.0 MHz 80 pF Turn-on Delay Time td(on) VDD = 15 V, ID = 4.0 A 17 ns tr VGS = 10 V 45 ns td(off) RG = 6.0 Ω 360 ns 160 ns Rise Time Turn-off Delay Time Fall Time tf Total Gate Charge QG VDD = 24 V 9.0 nC Gate to Source Charge QGS VGS = 4.0 V 1.5 nC Gate to Drain Charge QGD ID = 8.2 A 4.5 nC VF(S-D) IF = 8.2 A, VGS = 0 V 0.84 V Reverse Recovery Time trr IF = 8.2 A, VGS = 0 V 160 ns Reverse Recovery Charge Qrr di/dt = 100 A / µs 200 nC Body Diode Forward Voltage TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. VGS RL VGS RG PG. Wave Form VDD 0 VGS 10% PG. 90% τ τ = 1 µs Duty Cycle ≤ 1% 2 90% VDS VDS 10% 0 10% Wave Form td(on) tr ton RL 50 Ω VDD 90% VDS VGS 0 IG = 2 mA td(off) tf toff Data Sheet G15621EJ1V0DS µ PA2451 TYPICAL CHARACTERISTICS (TA = 25°C) FORWARD BIAS SAFE OPERATING AREA DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 1000 100 80 ID - Drain Current - A dT - Derating Factor - % 100 60 40 n) S(o RD S VG (@ 10 ID (pulse) ited Lim 5 V) PW = 10 µs . = 4 PW = 100 µs ID (DC) PW = 1 ms 1 PW = 10 ms PW = 100 ms DC (2 units) DC (1 unit) 20 0.1 0 0.01 0.1 Single Pulse PD (FET1):PD (FET2) =1:1 30 60 120 90 TA - Ambient Temperature - ˚C 0 150 Pulsed Pulsed VDS = 10 V 10 ID - Drain Current - A ID - Drain Current - A 100 FORWARD TRANSFER CHARACTERISTICS 100 50 VGS = 4.5 V 40 30 20 0 0.0 1 75˚C 0.1 25˚C 0.01 −25˚C 0.0001 0.2 0.4 0.6 0.8 VDS - Drain to Source Voltage - V 0 1.0 1.0 50 100 1.0 1.5 2.0 2.5 3.0 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 | yfs | - Forward Transfer Admittance - S 1.5 VDS = 10 V ID = 1 mA 0 0.5 VGS - Gate to Sorce Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 0.5 −50 TA = 125˚C 0.001 2.5 V 10 VGS(off) - Gate to Source Cut-off Voltage - V 10 VDS - Drain to Source Voltage - V DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 60 1 150 VDS = 10 V Pulsed 10 TA = 75˚C 25˚C −25˚C 1 0.1 0.01 0.01 Tch - Channel Temperature - ˚C Data Sheet G15621EJ1V0DS 0.1 1 10 100 ID - Drain Current - A 3 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ µ PA2451 70 Pulsed VGS = 2.5 V 60 50 40 TA = 125˚C 30 75˚C 25˚C −25˚C 20 10 0.1 10 1 100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 35 Pulsed VGS = 3.1 V 30 TA = 125˚C 25 75˚C 20 25˚C −25˚C 15 10 0.1 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ ID - Drain Current - A 30 Pulsed VGS = 4.0 V 25 TA = 125˚C 75˚C 20 25˚C 15 −25˚C 10 0.1 1 100 10 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 30 Pulsed VGS = 4.5 V 25 TA = 125˚C 20 75˚C 25˚C 15 −25˚C 10 0.1 Pulsed VGS = 2.5 V 3.1 V 25 4.0 V 4.5 V 20 15 10 −50 0 50 100 - Channel Temperature -˚C 150 RDS (on) - Drain to Source On-state Resistance - mΩ RDS (on) - Drain to Source On-state Resistance - mΩ 35 Tch 4 ID - Drain Current - A DRAIN TO SOURCE ON - STATE RESISTANCE vs. CHANNEL TEMPERATURE 30 100 10 1 ID - Drain Current - A ID = 4.0 A 100 10 1 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 40 Pulsed ID = 4.0 A 30 20 10 0 2 4 6 8 VGS - Gate to Source Voltage - V Data Sheet G15621EJ1V0DS 10 µ PA2451 SWITCHING CHARACTERISTICS CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE VGS = 0 V f = 1 MHz td (on), tr, td(off), tf - Switchig Time - ns Ciss, Coss, Crss - Capacitance - pF 10000 1000 1000 Ciss 100 Coss Crss 10 0.01 1 0.1 10 VDD = 15 V VGS = 10 V RG = 0 Ω tf 100 tr td(on) 10 0.1 100 1.0 ID - Drain Current - A VDS - Drain to Source Voltage - V 4 VGS - Gate to Drain Voltage - V IF - Diode Forward Current - A Pulsed VGS = 0 V 10 1 10 DYNAMIC INPUT/OUTPUT CHARACTERISTICS SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 td(off) ID = 8.2 A VDD = 24 V 15 V 6V 3 2 1 0.1 0 0.6 0.8 1.0 1.2 1.4 0 2 1.6 4 6 8 10 QG - Gate Charge - nC VF(S-D) - Source to Drain Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(ch-A) - Transient Thermal Resistance - ˚C/W 0.01 0.4 S Single Pulse PD (FET1):PD (FET2) =1:1 Mounted on FR4 board on 50 cm 2x 1.0 mmt 178.6˚C/W 100 Mounted on Ceramic board on 2 50 cm x 1.1 mmt 50 ˚C/W 10 1 0.1 0.001 0.01 0.1 1 10 PW - Pulse Width - s Data Sheet G15621EJ1V0DS 100 1000 5 µ PA2451 [MEMO] 6 Data Sheet G15621EJ1V0DS µ PA2451 [MEMO] Data Sheet G15621EJ1V0DS 7 µ PA2451 • The information in this document is current as of March, 2002. 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