NTE NTE397

NTE397
Silicon PNP Transistor
Power Amplifier & High Speed Switch
(Compl to NTE396)
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17.5°C/W
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150°C/W
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage VCEO(sus) IC = 50mA, IB = 0, Note 1
300
–
–
V
Collector Cutoff Current
ICBO
VCB = 280V, IE = 0
–
–
50
µA
Emitter Cutoff Current
IEBO
VEB = 6V, IC = 0
–
–
20
µA
hFE
IC = 50mA, VCE = 10V
30
–
120
Output Capacitance
Cobo
VCB = 10V, IE = 0, f = 1MHz
–
–
15
pF
Input Capacitance
Cibo
VCB = 5V, IC = 0, f = 1MHz
–
–
75
pF
Small–Signal Current Gain
hfe
IC = 10mA, VCE = 10V, f = 1MHz
25
–
–
Re(hie)
VCE = 10V, IC = 5mA, f = 1MHz
–
–
300
ON Characteristics
DC Current Gain
Small–Signal Characteristics
Real Part of Input Impedance
Note 1. Pulse Test; Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
CAUTION: The sustaining voltage must not be measured on a curve tracer.
Ω
.370 (9.39) Dia Max
.355 (9.03) Dia Max
.260
(6.6)
Max
.500
(12.7)
Min
.018 (0.45)
Base
Emitter
Collector/Case
45°
.031 (.793)