2N2222A Silicon NPN Transistor Small Signal General Purpose

2N2222A
Silicon NPN Transistor
Small Signal General Purpose Amplifier & Switch
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA
Total Device Dissipation, PD
TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C
Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 325C/W
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150C/W
Note 1. Stresses exceeding Absolute Maximum Ratings may damage the devices. Maximum ratings
are stress ratings only. Functional operation above the Recommended Operating Conditions
is not implied. Extended exposure to stresses above the Recommended Operating Conditions
may affect device reliability.
Electrical Characteristics: (TA = 25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
50
−
−
V
VCB = 60V
−
−
10
nA
VCB = 75V
−
−
10
A
VEB = 4V
−
−
10
nA
VEB = 6V
−
−
10
A
VCE = 50V
−
−
50
nA
OFF Characteristics
Collector−Emitter Breakdown Voltage
Collector−Base Cutoff Current
Emitter−Base Cutoff Current
Collector−Emitter Cutoff Current
V(BR)CEO IC = 10mA
ICBO
IEBO
ICES
Electrical Characteristics (Cont’d): (TA = 25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
50
−
−
IC = 1mA
75
−
325
IC = 10mA
100
−
−
IC = 150mA
100
−
300
IC = 500mA
30
−
−
IC = 150mA, IB = 15mA
−
−
0.3
V
IC = 500mA, IB = 50mA
−
−
1.0
V
IC = 150mA, IB = 15mA
0.6
−
1.2
V
IC = 500mA, IB = 50mA
−
−
2.0
V
ON Characteristics (Note 1)
DC Current Gain
hFE
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
VCE = 10V IC = 0.1mA
VCE(sat)
VBE(sat)
Small−Signal Characteristics
Magnitude of Small-Signal Current Gain
|hfe|
IC = 20mA, VCE = 20V, f = 100MHz
2.5
−
−
Small−Signal Current Gain
hfe
IC = 1mA, VCE = 10V, f = 1kHz
50
−
−
Input Capacitance
Cibo
VEB = 5V, IC = 0, 100kHz  f  1MHz
−
−
25
pF
Output Capacitance
Cobo
VCB = 10V, IE = 0, 100kHz  f  1MHz
−
−
8
pF
Switching Characteristics
Turn−On Time
ton
−
−
35
ns
Turn−Off Time
toff
−
−
300
ns
Note 1. Pulse Test: Pulse Width  300s, Duty Cycle  2%.
.230 (5.84) Dia Max
.195 (4.95) Dia Max
.210
(5.33)
Max
.030 (.762) Max
.500
(12.7)
Min
.018 (0.45)
Base
Emitter
Collector
45
.041 (1.05)