MPSA05 (NPN) & MPSA06 (PNP) Silicon Complementary

MPSA05 (NPN) & MPSA06 (PNP)
Silicon Complementary Transistors
High Voltage, General Purpose Amplifier
TO−92 Type Package
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO
MPSA05 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
MPSA06 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Collector−Base Voltage, VCBO
MPSA05 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
MPSA06 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Device Dissipation @ TA = +25C, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW
Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/C
Total Device Dissipation @ TC = +25C, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W
Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Thermal Resistance, Junction−to−Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . 200C/mW
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3C/mW
Note 1. RthJA is measured with the device soldered into a typical printed circuit board.
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
60
−
−
V
80
−
−
V
4
−
−
V
VCE = 60V, IB = 0
−
−
0.1
A
VCB = 60V, IE = 0
−
−
0.1
A
VCB = 80V, IE = 0
−
−
0.1
A
OFF Characteristics
Collector−Emitter Breakdown Voltage
MPSA05
V(BR)CEO
IB = 1mA, IC = 0
MPSA06
Emitter−Base Breakdown Voltage
V(BR)EBO IE = 100A, IC = 0
Collector Cutoff Current
ICES
Collector Cutoff Current
MPSA05
ICBO
MPSA06
Note 2. Pulse Test: Pulse Width  300s, Duty Cycle  2%.
Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ Max Unit
ON Characteristics
DC Current Gain
hFE
IC = 10mA, VCE = 1V
100
−
−
IC = 100mA, VCE = 1V
100
−
−
Collector−Emitter Saturation Voltage
VCE(sat) IC = 100mA, IB = 10mA
−
−
0.25
V
Base−Emitter ON Voltage
VBE(on)
−
−
1.2
V
100
−
−
MHz
100
−
−
MHz
IC = 100mA, VCE = 1V
Small−Signal Characteristics
Current Gain − Bandwidth Product
MPSA05
MPSA06
fT
IC = 10mA, VCE = 2V,
f = 100MHz, Note 3
Note 3. fT is defined as the frequency at which |hfe| extrapolates to unity.
.135 (3.45) Min
.210
(5.33)
Max
Seating Plane
.021 (.445) Dia Max
.500
(12.7)
Min
E B C
.100 (2.54)
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
.205 (5.2) Max
.105 (2.67) Max