CM600DU-5F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD™ F-Series Module 600 Amperes/250 Volts A D TC Measured Point F T - (4 TYP.) H G2 E2 CL B E R CM C2E1 J E2 E1 C1 G1 25 25 XH Q S - NUTS (3 TYP) Q P N G V - THICK x W - WIDE TAB (4 PLACES) K K K M C LABEL F G2 E2 C2E1 C1 E2 Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking E1 G1 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 4.33 110.0 M 0.33 8.5 B 3.15 80.0 N 0.10 2.5 C 1.14 +0.04/-0.02 29.0 +1.0/-0.5 Dimensions Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Inches Millimeters P 0.85 21.6 D 3.66±0.01 93.0±0.25 Q 0.98 25.0 E 2.44±0.01 62.0±0.25 R 0.86 21.75 F 0.83 21.0 S M6 M6 G 0.16 4.0 T 0.26 Dia. H 0.24 6.0 V 0.02 6.5 Dia. 0.5 J 0.59 15.0 W 0.110 2.79 K 0.55 14.0 X 1.08 27.35 Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ Welding Power Supplies □ Laser Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM600DU-5F is a 250V (VCES), 600 Ampere Dual IGBTMOD™ Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 600 5 1 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600DU-5F Dual IGBTMOD™ F-Series Module 600 Amperes/250 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM600DU-5F Units Junction Temperature Tj -40 to 150 °C Storage Temperature Tstg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 250 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts Collector Current (Tc = 25°C) Peak Collector Current Emitter Current** (Tc = 25°C) IC 600 Amperes IC(rms) 350 Amperes (rms) ICM 1200* Amperes IE 600 Amperes IE(rms) 350 Amperes (rms) Peak Emitter Current** IEM 1200* Amperes Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) Pc 1100 Watts Mounting Torque, M6 Main Terminal – 40 in-lb Mounting Torque, M6 Mounting – 40 in-lb Weight – 580 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Volts Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector-Cutoff Current Symbol Test Conditions Min. Typ. Max. ICES VCE = VCES, VGE = 0V – – 1 Units mA IGES VGE = VGES, VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 60mA, VCE = 10V 3.0 4.0 5.0 Volts Collector-Emitter Saturation Voltage VCE(sat) Gate Leakage Current IC = 600A, VGE = 10V, Tj = 25°C – 1.2 1.7 Volts IC = 600A, VGE = 10V, Tj = 125°C – 1.1 – Volts Total Gate Charge QG VCC = 100V, IC = 600A, VGE = 10V – 2200 Emitter-Collector Voltage** VEC IE = 600A, VGE = 0V – – – 2.0 nC Min. Typ. Max. – – 170 nf – – 11 nf Volts **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Test Conditions VCE = 10V, VGE = 0V Reverse Transfer Capacitance Cres – – Turn-on Delay Time td(on) VCC = 100V, IC = 600A, – – tr VGE1 = VGE2 = 10V, – td(off) RG = 4.2⍀, – Rise Time Turn-off Delay Time nf 850 ns – 600 ns – 1100 ns Fall Time tf Inductive Load – – 500 ns Diode Reverse Recovery Time** trr Switching Operation – – 300 ns – 20.0 – µC Diode Reverse Recovery Charge** Qrr IE = 600A **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 5.7 Units Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600DU-5F Dual IGBTMOD™ F-Series Module 600 Amperes/250 Volts Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Min. Typ. Per IGBT 1/2 Module Test Conditions – – 0.11 °C/W Rth(j-c)R Per FWDi 1/2 Module – – 0.20 °C/W Rth(c-f) Per Module, Thermal Grease Applied – 0.020 – °C/W Per IGBT 1/2 Module – – 0.05 °C/W Thermal Resistance, Junction to Case Rth(j-c)Q Thermal Resistance, Junction to Case Contact Thermal Resistance Thermal Resistance, Junction to Case Rth(j-c')Q Max. Units TC Reference Point Under Chip 1200 1200 Tj = 25oC 8 6 5.75 600 5.5 300 5.25 VCE = 10V Tj = 25°C Tj = 125°C COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) 10 900 2.0 6.25 6.5 VGE = 15V COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 900 600 300 VGE = 15V Tj = 25°C Tj = 125°C 1.6 1.2 0.8 0.4 5 0 0 0 1 2 3 4 5 2 4 6 8 0 10 400 1200 800 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 104 10 4 IC = 1200A 2 IC = 600A 12 102 101 0 8 103 Cies 102 101 Coes VGE = 0V f = 1MHz IC = 240A 4 CAPACITANCE, Cies, Coes, Cres, (nF) 6 EMITTER CURRENT, IE, (AMPERES) 8 0 103 Tj = 25°C Tj = 25°C COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 0 0 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 16 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 20 0.6 100 0.8 1.0 1.2 1.4 1.6 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 1.8 10-1 Cres 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 3 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600DU-5F Dual IGBTMOD™ F-Series Module 600 Amperes/250 Volts HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY TIME, trr, (ns) td(on) SWITCHING TIME, (ns) tf tr 102 VCC = 100V VGE = ±10V RG = 4.2 Ω Tj = 125°C Inductive Load 101 101 102 103 di/dt = -600A/µsec Tj = 25°C trr Irr VCC = 100V VGE = ±10V RG = 4.2 Ω Tj = 25°C Inductive Load 101 1 10 100 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.11°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 4 101 10-4 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) 100 10-1 101 103 102 EMITTER CURRENT, IE, (AMPERES) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 102 102 COLLECTOR CURRENT, IC, (AMPERES) 10-3 101 GATE CHARGE, VGE 103 100 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.20°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 IC = 600A 16 VCC = 50V 12 VCC = 100V 8 4 0 0 1500 3000 GATE CHARGE, QG, (nC) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 101 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 103 td(off) REVERSE RECOVERY CURRENT, Irr, (AMPERES) 103 REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 10-3 10-3 4500