2N2907AQCSM QUAD HIGH SPEED, MEDIUM POWER PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm (inches) 0.30 (0.012) Rad. 4 plcs 8.89 (0.350) 0.65 (0.025) typ. 7.24 (0.285) 1.27 (0.050) typ. 12 13 14 16 15 17 10 18 • HERMETIC CERAMIC SURFACE MOUNT PACKAGE 0.23 (0.009) Rad. 18 plcs 1 • CECC SCREENING OPTIONS 2 8 7 6 5 4 3 • SPACE QUALITY LEVELS OPTIONS 2.54 (0.100) 1.14(0.045) typ FEATURES • QUAD SILICON PLANAR EPITAXIAL PNP TRANSISTORS 11 9 1.14 – 0.15 (0.045 – 0.006) 1.40 (0.055) Nom. • HIGH SPEED SATURATED SWITCHING LCC6 PACKAGE APPLICATIONS: Underside View 1 – Base 1 2 – Emitter 1 3 – Collector 1 7.– Collector 2 8.– Emitter 2 9 – Base 2 10.– Base 3 11 – Emitter 3 12 – Collector 3 16.– Collector 4 17.– Emitter 4 18.– Base 4 4,5,6,13,14,15 – n/c Hermetically sealed quad surface mount version of the popular 2N2907A for high reliability / space applications requiring small size and low weight devices. ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD PD PD RθJA RθJC TSTG Semelab plc. PER DIVCE Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current Total Device Dissipation(TA 25°C) Derate above 50°C TOTAL DEVICE Total Device Dissipation (TA 25°C) Thermal Resistance Junction to Ambient Thermal Resistance Junction to Case Storage Temperature –60V –60V –5V 600mA 500mW 2.0mW / °C 2.0W 60°C / W 30°C / W –55 to 200°C Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail [email protected] Website http://www.semelab.co.uk Prelim. 1/99 2N2907AQCSM ELECTRICAL CHARACTERISTICS PER DEVICE (TC = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit VCEO(sus)* Collector – Emitter Sustaining Voltage IC = 10mA –60 V V(BR)CBO* Collector – Base Breakdown Voltage IC = 10µA –60 V V(BR)EBO* Emitter – Base Breakdown Voltage IE = 10µA IC = 0 –5 V ICEX* Collector Cut-off Current VCE = 30V VBE = 0.5V 50 ICBO* Collector – Base Cut-off Current IE = 0 VCB = 50V 0.01 IBEO Base Cut-off Current VCE(sat)* Collector – Emitter Saturation Voltage VBE(sat)* Base – Emitter Saturation Voltage hFE* TC = 125°C DC Current Gain nA 10 VCE = 30V VBE = 0.5V 50 IC = 150mA IB = 15mA –0.4 IC = 500mA IB = 50mA –1.6 IC = 150mA IB = 15mA –1.3 IC = 500mA IB = 50mA –2.6 IC = 0.1mA VCE = 10V 75 IC = 1mA VCE = 10V 100 IC = 10mA VCE = 10V 100 IC = 150mA VCE = 10V 100 IC = 500mA VCE = 10V 50 µA nA V V — 300 * Pulse test tp = 300µs , δ ≤ 2% DYNAMIC CHARACTERISTICS PER DEVICE (TC = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit fT Transition Frequency IC = 50mA VCE = 20V f = 100MHz 200 MHz Cob Output Capacitance VCB = 10V IE = 0 f = 1.0MHz 8 pF Cib Input Capacitance VBE = 2V IC = 0 f = 1.0MHz 30 pF SWITCHING CHARACTERISTICS PER DEVICE (RESISTIVE LOAD) (TC = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit ton Turn-on Time VCC = 30V 26 45 td Delay Time IC = 150mA 6.0 10 tr Rise Time IB1 = 15mA 20 40 toff Turn-off Time VCC = 6V 70 100 ts Storage Time IC = 150mA 50 80 tf Fall Time IB1 = IB2 = 15mA 20 30 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail [email protected] Website http://www.semelab.co.uk ns ns Prelim. 1/99