SEME HCT700 LAB MECHANICAL DATA Dimensions in mm (inches) COMPLEMENTARY SWITCHING TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS LCC2 – Ceramic Surface Mount Package FEATURES 2 3 1 4 A 6 0.23 rad. (0.009) 5 A = 1.27 ± 0.13 (0.05 ± 0.005) 6.22 ± 0.13 (0.245 ± 0.005) Pi n 1 CO L L ECT OR Pi n 4 CO L L ECT OR • SILICON PLANAR EPITAXIAL NPN /PNP TRANSISTORS 4.32 ± 0.13 (0.170 ± 0.005) 1.65 ± 0.13 (0.065 ± 0.005) 0.64 ± 0.08 (0.025 ± 0.003) 2.54 ± 0.13 (0.10 ± 0.005) 2.29 ± 0.20 (0.09 ± 0.008) 1.40 ± 0.15 (0.055 ± 0.006) • HERMETIC CERAMIC SURFACE MOUNT PACKAGE • CECC SCREENING OPTIONS • SPACE QUALITY LEVELS OPTIONS • HIGH SPEED SATURATED SWITCHING DESCRIPTION Hermetically sealed surface mount complementary transistor pair. Pi n 6 EM I T T ER Pin 2 B AS E Pin 3 B AS E Pin 5 E MI T T ER ABSOLUTE MAXIMUM RATINGS The HCT700 transistor die have similar electrical characteristics to the 2N2222A on the NPN side and the 2N2907A on the PNP side. The HCT700 is ideal for high reliability and space applications requiring small size and low weight devices. (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD PD TJ , Tstg TL TL Semelab plc. Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current Power Dissipation @ Tamb = 25°C Power Dissipation @ Tsubstrate = 25°C Derate above 25°C NPN to PNP Isolation Voltage Operating and Storage Temperature Range Soldering temperature (Vapour phase reflow for 30 sec) Soldering temperature (Heated collet for 5 sec) Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk NPN 75 50 6.0 800mA PNP 60 60 5.0 600mA 0.4W 2.0W 11.4mW / °C 500V –65 to +200°C 215°C 260°C Prelim. 4/94 SEME HCT700 LAB ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated) Parameter Test Conditions NPN PNP Min. Max. Min. Max. Unit Off Characteristics V(BR)CBO Collector – Base Breakdown Voltage IC = 10mA IE = 0 75 60 V V(BR)CEO Collector – Emitter Breakdown Voltage IC = 10mA IB = 0 50 60 V V(BR)EBO Emitter – Base Breakdown Voltage IE = 10mA IC = 0 6.0 5.0 V IE = 0 VCB = 60V Collector – Base Tamb = 25°C VCB = 50V Cut-off Current IE = 0 VCB = 60V ICBO 10 10 10 10 Tamb = 150°C VCB = 50V IEBO Emitter– Base Cut-off Current ICES Collector – Emitter Cut-off Current IC = 0 VEB = 4V Tamb = 25°C VEB = 3.5V 10 50 mA nA mA 1.0 VCE = 50V nA On Characteristics hFE DC Current Gain VCE(SAT Collector – Emitter Saturation Voltage VBE(SAT) Base – Emitter Saturation Voltage VCE = 10V IC = 0.1mA 50 VCE = 10V IC = 1mA 75 VCE = 10V IC = 10mA 100 VCE = 10V 100 VCE = 10V IC = 150mA 1 IC = 500mA 1 VCE = 10V IC = 10mA 35 Tamb = –55°C IC = 1mA IC = 150mA IC = 500mA IB = 15mA 1 IB = 50mA 1 IB = 15mA 1 IB = 50mA 1 VCE = 10V IC = 1mA IC = 500mA IC = 150mA 75 325 100 450 100 300 30 100 300 — 50 50 0.60 0.30 0.40 1.00 1.60 1.20 1.30 2.00 2.60 V V Small Signal Characteristics hfe Small Signal Current Gain hfe Small Signal Current Gain Cobo Output Capacitance Cibo Input Capacitance f = 1kHz VCE = 20V IC = 20mA f = 100MHz IC = 50mA 50 100 2.5 — 2.0 VCE = 10V f = 100kHz to 1MHz 8.0 VEB = 2V 25 f = 100kHz to 1MHz — 8.0 30 VEB = 0.5V f = 100kHz to 1MHz pF pF Small Signal Characteristics ton Turn On Time toff Turn Off Time VCC = 30V IC = 150mA IB1 = 15mA VCC = 30V IC = 150mA IB1 = IB2 = 15mA 35 45 ns 300 300 ns 1 Pulse Test: Pulse Width £ 300ms, d £ 2% Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 4/94