2N7081–220M–ISO MECHANICAL DATA Dimensions in mm(inches) 4.83 (0.190) 5.08 (0.200) 0.89 (0.035) 1.14 (0.045) VDSS ID(cont) RDS(on) 3.56 (0.140) Dia. 3.81 (0.150) 10.41 (0.410) 10.92 (0.430) 13.38 (0.527) 13.64 (0.537) 10.41 (0.410) 10.67 (0.420) 16.38 (0.645) 16.89 (0.665) N–CHANNEL POWER MOSFET 100V 11A Ω 0.15Ω 12.07 (0.500) 19.05 (0.750) 1 2 3 FEATURES • TO–220 ISOLATED HERMETIC PACKAGE • LOW RDS(ON) 0.64 (0.025) Dia. 0.89 (0.035) 2.54 (0.100) BSC • SIMPLE DRIVE REQUIREMENTS 3.05 (0.120) BSC TO–220 Metal Package Pin 1 – Gate Pin 2 – Drain Pin 3 – Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDS Drain – Source Voltage 100V VGS Gate – Source Voltage ±20V ID Continuous Drain Current IDM Pulsed Drain Current 1 PD Power Dissipation TC = 25°C 11A TC = 100°C 7.7A 48A TC = 25°C 45W TC = 100°C 18W TJ , Tstg Operating and Storage Temperature Range TL Lead Temperature (1/16” from case for 10 sec.) Semelab plc Telephone (01455) 556565 E-mail: [email protected] Fax (01455) 552612. Web site: http://www.semelab.co.uk –55 to 150°C 300°C Prelim. 6/98 2N7081–220M–ISO ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Parameter BVDSS Test Conditions STATIC ELECTRICAL RATINGS Drain – Source Breakdown Voltage VGS = 0 ID = 250µA 100 Gate Threshold Voltage VDS = VGS ID = 250µA 2 VDS = 0 VGS = ±20V VGS(th) Gate – Body Leakage IDSS Zero Gate Voltage Drain Current ID(on) RDS(on) gfs Min. Typ. Max. V VDS = 80V 4 V ±100 nA 25 VGS = 0 TJ = 125°C On–State Drain Current VDS = 10V VGS = 10V Static Drain – Source On–State VGS = 10V Resistance ID = 7.7A TJ = 125°C Forward Transconductance VDS = 15V IDS = 7.7A 250 11 4 Unit µA A 0.12 0.15 0.22 0.27 Ω S 5 DYNAMIC CHARACTERISTICS Ciss Input Capacitance VGS = 0 600 Coss Output Capacitance VDS = 25V 190 Crss Reverse Transfer Capacitance f = 1MHz 35 td(on) Turn–On Delay Time VDD = 50V tr Rise Time VGEN =10V 45 td(off) Turn–Off Delay Time RL = 4.1Ω 30 tf Fall Time RG = 7.5Ω 10 ID = 11A pF 7 ns SOURCE – DRAIN DIODE CHARACTERISTICS IS 12 Continuous Source Current 2 A ISM Pulse Source Current VSD Diode Forward Voltage IF =11 trr Reverse Recovery Time IF = IS 100 Qrr Reverse Recovery Charge dIF/dt = 100A/µs 0.7 RθJC PACKAGE CHARACTERISTICS Thermal Resistance Junction – Case 2.8 RθJA Thermal Resistance Junction – Ambient 80 RθCS Thermal Resistance Case – Sink Semelab plc Telephone (01455) 556565 E-mail: [email protected] 48 VGS = 0 2.5 V 300 ns µC K/W 1 Fax (01455) 552612. Web site: http://www.semelab.co.uk Prelim. 6/98