SLD1132VS 635nm Red Laser Diode Description The SLD1132VS is a red laser diode designed for laser pointers. Its wavelength (635nm typ.) is shortened by 35nm and visibility is increased by approximately 7 times, compared to the conventional visible laser diode (670nm typ.). M-274 Features • Short wavelength (635nm typ.) • Small package (φ5.6) • Fundamental traverse/single longitudinal mode Applications Laser pointers Structure • AlGaInP quantum well structure laser diode • PIN photo diode for optical power output monitor Recommended Optical Power Output 3mW Absolute Maximum Ratings • Optical power output Po • Reverse voltage VR • Operating temperature • Storage temperature LD PD Topr Tstg Connection Diagram 5 mW 2 V 15 V –10 to +40 °C –40 to +85 °C Pin Configuration 3 COMMON LD PD 2 2 1 1 3 1. LD cathode 2. PD anode 3. COMMON Bottom View Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E94Y01C98-PS SLD1132VS Electrical and Optical Characteristics (Tc = 25°C) Item Symbol Tc: Case temperature Conditions Min. Typ. Max. Unit 50 70 mA Threshold current Ith Operating current Iop Po = 3mW 60 80 mA Operating voltage Vop Po = 3mW 2.4 3.0 V Wavelength λ Po = 3mW 625 635 645 nm 24 32 40 degree 5 7 12 degree ±80 µm ±3 degree ±4 degree 0.8 mW/mA 20 µm 0.30 mA Radiation angle Positional accuracy Perpendicular θ⊥ Parallel θ// Position ∆X, ∆Y, ∆Z Angle ∆φ Po = 3mW Po = 3mW ∆φ Differential efficiency ηD Po = 3mW Astigmatism As | Z // – Z⊥ | Monitor current Imon Po = 3mW, Vr = 5V 0.15 0.35 0.05 0.10 Handling Precautions (1) Eye protection against laser beams The optical output of laser diodes ranges from several mW to 3W. However the optical power density of the laser beam at the diode chip reaches 1MW/cm2. Unlike gas lasers, since laser diode beams are divergent, uncollimated laser diode beams are fairly safe at a laser diode. For observing laser beams, ALWAYS use safety goggles that block infrared rays. Usage of IR scopes, IR cameras and fluorescent plates is also recommended for monitoring laser beams safely. Safety goggles for protection from laser beam Laser diode Lens Optical material IR fluorescent plate Optical board Optical power output control device Temperature control device (2) Prevention of surge current and electrostatic discharge Laser diode is most sensitive to electrostatic discharge among semiconductors. When a large current is passed through the laser diode even for an extremely short time (in the order of nanosecond), the strong light emitted from the laser diode promotes deterioration and then laser diodes are destroyed. Therefore, note that the surge current should not flow the laser diode driving circuit from switches and others. Also, if the laser diode is handled carelessly, it may be destructed instantly because electrostatic discharge is easily applied by a human body. Be great careful about excess current and electrostatic discharge. –2– SLD1132VS Example of Representative Characteristics Optical power output vs. Forward current characteristics Optical power output vs. Monitor current characteristics Far field pattern (FFP) 6 Po = 3mW, Tc = 25°C TC = 0°C 25°C 5 40°C 40°C 4 θ Relative radiant intensity Po – Optical power output [mW] TC = 0°C 25°C Imon 3 2 IF θ 1 0 0 10 20 30 40 50 0 0.2 Iop – Monitor current [mA] 60 70 80 90 –60 –40 –20 IF – Forward current [mA] 0 20 40 60 Angle [degree] Threshold current vs. Temperature characteristics Monitor current vs. Temperature characteristics 0.4 200 100 10 –20 Im – Monitor current [mA] Ith – Threshold current [mA] PO = 3mW –10 0 10 20 30 40 50 0.3 0.2 0.1 0 –20 60 Tc – Case temperature [°C] 0 20 40 Tc – Case temperature [°C] –3– 60 SLD1132VS Temperature dependence of spectrum Po = 3mW Relative radiant intensity Tc = 40°C Tc = 25°C Tc = 0°C 620 630 640 λ – Wavelength [nm] –4– 650 660 SLD1132VS Power dependence of spectrum Tc = 25°C Relative radiant intensity Po = 5mW Po = 3mW Po = 1mW 620 630 640 λ – Wavelength [nm] –5– 650 660 SLD1132VS Unit: mm M-274 Reference Slot 0.4 1.0 0.5 90° 3 1 2 0 φ5.6 – 0.025 φ4.4 MAX 1.2 ± 0.1 Reference Plane 2 3 1 3 – φ0.45 ∗Optical Distance = 1.35 ± 0.08 6.5 LD Chip & Photo Diode SONY CODE 2.6 MAX 0.5 MIN φ3.7 MAX φ1.0 MIN ∗1.26 Window Glass 0.25 Package Outline PCD φ2.0 M-274 PACKAGE WEIGHT EIAJ CODE JEDEC CODE –6– 0.3g