SLD304XT 1000mW High Power Laser Diode Description The SLD304XT allows independent thermal and electric design. This laser diode has a built-in TE (Thermo Electric) cooler. Equivalent Circuit Features • High power Recommended optical power output Po = 900mW • Low operating current • Flat Package with built-in photodiode, TE cooler and thermistor TH Applications • Solid state laser excitation • Medical use TE Cooler N P 1 2 LD 3 4 PD 5 6 7 8 Pin Configuration (Top View) No. Structure AlGaAs double-hetero-type laser diode Function 1 TE cooler (negative) 2 Thermistor lead 1 3 Thermistor lead 2 Operating Lifetime MTTF 10,000H (effective value) at Po = 900mW, Tth = 25°C 4 Laser diode (anode) 5 Laser diode (cathode) Absolute Maximum Ratings (Tth = 25°C) • Optical power output Po • Reverse voltage VR LD PD • Operating temperature Topr • Storage temperature Tstg 6 Photodiode (cathode) 7 Photodiode (anode) 8 TE cooler (positive) 1000 2 15 –10 to +30 –40 to +85 mW V V °C °C Warranty This warranty period shall be 90 days after receipt of the product or 1,000 hours operation time whichever is shorter. Sony Quality Assurance Department shall analyze any product that fails during said warranty period, and if the analysis results show that the product failed due to material or manufacturing defects on the part of Sony, the product shall be replaced free of charge. Laser diodes naturally have differing lifetimes which follow a Weibull distribution. Special warranties are also available. 1 8 Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E88066C02-PS SLD304XT Electrical and Optical Characteristics Item (Tth: Thermistor temperature, Tth = 25°C) Symbol Min. Conditions Typ. Max. Unit 550 750 mA Threshold current Ith Operating current Iop PO = 900mW 1600 2000 mA Operating voltage Wavelength∗ Vop PO = 900mW 2.2 3.0 V λp PO = 900mW 840 nm Monitor current Imon PO = 900mW VR = 10V Perpendicular Radiation angle Positional accuracy θ⊥ Parallel θ// Position ∆X, ∆Y Angle ∆φ⊥ 770 PO = 900mW 28 40 degree 13 17 degree ±100 µm ±3 degree PO = 900mW Differential efficiency ηD PO = 900mW Thermistor resistance Rth Tth = 25°C mA 1.5 0.65 0.85 mW/mA 10 kΩ ∗ Wavelength Selection Classification Type Wavelength (nm) SLD304XT-1 785 ± 15 SLD304XT-2 810 ± 10 SLD304XT-3 830 ± 10 Type Wavelength (nm) SLD304XT-21 798 ± 3 SLD304XT-24 807 ± 3 SLD304XT-25 810 ± 3 Handling Precautions Eye protection against laser beams The optical output of laser diodes ranges from several mW to 1W. However the optical power density of the laser beam at the diode chip reaches 1MW/cm2. Unlike gas lasers, since laser diode beams are divergent, uncollimated laser diode beams are fairly safe at a laser diode. For observing laser beams, ALWAYS use safety goggles that block infrared rays. Usage of IR scopes, IR cameras and fluorescent plates is also recommended for monitoring laser beams safely. Lens Laser diode Optical material Safety goggles for protection from laser beam IR fluorescent plate C ATC AP Optical boad Optical power output control device temperature control device –2– SLD304XT Example of Representative Characteristics Optical power output vs. Forward current characteristics Optical power output vs. Monitor current characteristics 1000 Tth = 25°C Tth = –10°C Po – Optical power output [mW] Po – Optical power output [mW] Tth = 0°C Tth = 30°C Tth = 15°C Tth = 25°C 500 1000 Tth = 15°C Tth = 0°C Tth = –10°C 500 0 0 Tth = 30°C 0 0.5 1 Imon – Monitor current [mA] 0 500 1000 1500 2000 IF – Forward current [mA] Power dependence of far field pattern (parallel to junction) Threshold current vs. Temperature characteristics 1000 Radiation intensity (optional scale) PO = 900mW 500 100 –10 0 10 20 30 PO = 800mW PO = 600mW PO = 400mW PO = 200mW Tth – Thermistor temperature [°C] –30 –20 –10 0 10 20 30 Angle [degree] Power dependence of near field pattern Oscillation wavelength vs. Temperature characteristics 830 Tth = 25°C PO = 900mW PO = 800mW PO = 600mW PO = 400mW PO = 200mW 200µm λp – Oscillation wavelength [nm] PO = 900mW Radiation intensity (optional scale) Ith – Threshold current [mA] Tth = 25°C 820 810 800 790 780 –10 0 10 20 30 Tth – Thermistor temperature [°C] –3– 40 SLD304XT Differential efficiency vs. Temperature characteristics Power dependence of polarization ratio 400 1.0 300 Polarization ratio ηD – Differential efficiency [mW/mA] Tth = 25°C 0.5 200 100 0 –10 0 10 20 30 0 40 Tth – Thermistor temperature [°C] 200 400 600 800 Po – Optical power output [mW] –4– 1000 SLD304XT Power dependence of wavelength 800 Relative radiant intensity Tth = 25°C Po = 400mW Relative radiant intensity Tth = 25°C Po = 200mW 805 810 800 Wavelength [nm] 805 Relative radiant intensity Tth = 25°C Po = 800mW Relative radiant intensity Tth = 25°C Po = 600mW 800 805 810 800 Wavelength [nm] Relative radiant intensity 805 805 Wavelength [nm] Tth = 25°C Po = 900mW 800 810 Wavelength [nm] 810 Wavelength [nm] –5– 810 SLD304XT Temperature dependence of wavelength (Po = 900mW) 795 Relative radiant intensity Tth = 0°C Relative radiant intensity Tth = –5°C 805 815 795 Wavelength [nm] 805 Relative radiant intensity Tth = 10°C Relative radiant intensity Tth = 5°C 795 805 815 795 Wavelength [nm] 805 815 Wavelength [nm] Relative radiant intensity Tth = 20°C Relative radiant intensity Tth = 15°C 795 815 Wavelength [nm] 805 815 795 Wavelength [nm] 805 Wavelength [nm] –6– 815 SLD304XT Relative radiant intensity Tth = 30°C Relative radiant intensity Tth = 25°C 795 805 815 795 805 Wavelength [nm] 815 Wavelength [nm] TE cooler characteristics TE cooler characteristics 1 TE cooler characteristics 2 10 10 Tc = 33°C Tc = 25°C 5 2.0A 4 5 1.5A 3 1.0A 2.0A 5 1.5A 4 5 ∆T vs Q 0. 5A 5A 50 1 2. 5A 1. 0A 1. 5A 0. 0 0.5A 2.0A 100 0 0 ∆T – Temperature difference [°C] 0 vs 1. 0A 50 2 Q 1. 5A 2.0A 1 2. 5A 100 ∆T – Temperature difference [°C] ∆T : Tc – Tth Tth: Thermistor temperature Tc : Case temperature Termistor characteristics 50 10 5 1 –10 0 3 1.0A 2 ∆T 0.5A 0 Q – Absorbed heat [W] IT = 2.5A VT – Pin voltage [V] ∆T vs V Rth – Thermistor resistance [kΩ] Q – Absorbed heat [W] ∆T vs V 10 20 30 40 50 60 70 Tth – Thermistor temperature [°C] –7– 0 VT – Pin voltage [V] IT = 2.5A SLD304XT Package Outline Unit: mm M – 273(LO – 10) + 0.05 4 – Ø3.0 0 Window Glass 28.0 ± 0.5 + 2.0 8.0 – 1.0 Ø5.0 * 7.5 ± 0.1 15.0 ± 0.05 14.0 33.0 ± 0.05 4 – R1.2 ± 0.3 8 – Ø0.6 2.54 19.0 LD Chip 10.4 *16.5 ± 0.1 3.0 Reference Plane 11.35 ± 0.1 28.0 ± 0.5 7.5 ± 0.2 0.65MAX 38.0 ± 0.5 *Distance between pilot hole and emittng area PACKAGE STRUCTURE SONY CODE M-273(LO-10) PACKAGE WEIGHT 43g EIAJ CODE JEDEC CODE –8– Sony Corporation