SONY SLD326YT-24

SLD326YT
4W High Power Laser Diode
Description
The SLD326YT has a compatible package, and
allows independent thermal and electric design.
It is a high power laser diode that affords easy
optical design.
M-288
Features
• High-optical power output
Recommended optical power output: PO = 4.0W
• High-optical power output density: 4W/400µm
(Emitting line width)
Equivalent Circuit
TE Cooler
Applications
• Solid state laser excitation
• Medical use
• Material processing
• Measurement
Case
PD
TH
Structure
AlGaAs quantum well structure laser diode
1
Operating Lifetime
MTTF 10,000H (effective value) at Po = 4.0W, Tth = 25°C
Absolute Maximum Ratings (Tth = 25°C)
• Optical power output
PO
4.4
• Reverse voltage
VRLD
2
PD
15
• Operating temperature (Tth)
Topr –10 to +30
• Storage temperature
Tstg –40 to +85
LD
W
V
V
°C
°C
Warranty
This warranty period shall be 90 days after receipt of the product or
1,000 hours operation time whichever is shorter.
Sony Quality Assurance Department shall analyze any product that
fails during said warranty period, and if the analysis results show
that the product failed due to material or manufacturing defects on
the part of Sony, the product shall be replaced free of charge.
Laser diodes naturally have differing lifetimes which follow a Weibull
distribution.
Special warranties are also available.
3
4
5
6
7
8
9
10
Pin Configuration (Top View)
No.
Function
1
TE cooler (negative)
2
—
3
Case
4
Laser diode (anode)
5
Thermistor
6
Thermistor
7
Laser diode (cathode)
8
Photo diode (anode)
9
Photo diode (cathode)
10
TE cooler (positive)
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
E95Z12B01-PS
SLD326YT
Electrical and Optical Characteristics
Item
(Tth = Thermistor temperature, Tth = 25°C)
Symbol
Conditions
Threshold current
Ith
Operating current
Iop
PO = 4.0W
Operating voltage
Wavelength∗
Vop
PO = 4.0W
λP
PO = 4.0W
Perpendicular
Radiation angle
Positional accuracy
θ⊥
Parallel
θ//
Position
∆X, ∆Y
Angle
∆φ⊥
Min.
4.0
Typ.
Max.
Unit
1.0
2.0
A
5.5
8.0
A
2.4
2.8
V
840
nm
790
20
30
40
degree
5
10
14
degree
±100
µm
±3
degree
±4
degree
PO = 4.0W
PO = 4.0W
∆φ//
Differential efficiency
ηD
PO = 4.0W
0.5
0.85
1.5
W/A
Monitor current
Imon
PO = 4.0W
VR = 10V
0.2
1.5
4.0
mA
Thermistor resistance
Rth
Tth = 25°C
10
kΩ
∗Wavelength Selection
Type
Wavelength (nm)
SLD326YT-1
795 ± 5
SLD326YT-2
810 ± 10
SLD326YT-3
830 ± 10
Type∗
Wavelength (nm)
SLD326YT-21
798 ± 3
SLD326YT-24
807 ± 3
SLD326YT-25
810 ± 3
Handling Precautions
Eye protection against laser beams
The optical output of laser diodes ranges from
several mW to 10W. However the optical power
density of the laser beam at the diode chip
reaches 1.5MW/cm2. Unlike gas lasers, since
laser diode beams are divergent, uncollimated
laser diode beams are fairly safe at a laser
diode. For observing laser beams, ALWAYS use
safety goggles that block infrared rays. Usage of
IR scopes, IR cameras and fluorescent plates is
also recommended for monitoring laser beams
safely.
Laser diode
Lens
Optical
material
Safety goggles for
protection from
laser beam
IR fluorescent plate
Optical board
Optical power output control device
Temperature control device
–2–
SLD326YT
Example of Representative Characteristics
Optical power output vs.
Forward current characteristics
Far field pattern
1.0
5
Tth = 25°C
PO = 4.0W
0.8
4
Relative radiant intensity
PO–Optical power output [W]
Tth = 25°C
3
2
0.6
θ⊥
0.4
θ//
0.2
1
0
1.5
3
4.5
6
–40
7.5
–20
0
20
40
IF–Forward current [A]
Angle [degree]
Oscillation wavelength
Thermistor characteristics
1.0
Tth = 25°C
PO = 4.0W
50
Rth–Thermistor resistance [kΩ]
Relative radiant intensity
0.8
0.6
0.4
0.2
792
796
800
804
10
5
808
0
–10 0
Wavelength [nm]
10 20
30 40
50 60
70
Tth–Thermistor temperature [°C]
TE cooler characteristics
TE cooler characteristics
20
20
40
15
30
∆TvsV T = 4A
20
10
3A
2A
5
10
1A
1A
2A
3A
20
40
∆TvsV T = 4A
30
10
2A
10
60
5
1A
1A
0
80
2A
∆TvsQ
T = 4A
3A
0
0
∆T–Temperature difference [°C]
15
3A
20
∆TvsQ
T = 4A
0
0
Q–Absorbed heat [W]
Tc = 25°C
VT–Pin voltage [V]
Q–Absorbed heat [W]
Tc = 33°C
20
40
VT–Pin voltage [V]
40
60
0
80
∆T–Temperature difference [°C]
∆T : Tc – Tth
Tth : Thermistor temperature
Tc : Case temperature
∆T : Tc – Tth
Tth : Thermistor temperature
Tc : Case temperature
–3–
SLD326YT
Unit: mm
M-288
+ 0.08
4 – φ4.04 – 0.03
31.75 ± 0.50
–
1.0
R1
.0
R1
.0
–
4
4
Window
Glass
φ5.0
12.8
19.05 ± 0.15
38.60 ± 0.15
9 – φ1.0
2.54
44.45 ± 0.50
LD Chip
0.9 MAX
3.0
Reference
Plane
17.8 ± 0.3
26.4
14.9 ± 0.3
3.6
31.75 ± 0.50
17.0
Package Outline
19.30 ± 0.15
SONY CODE
M-288
EIAJ CODE
JEDEC CODE
PACKAGE WEIGHT
–4–
150g
Sony Corporation