SLD323XT 1W High Power Laser Diode Description The SLD323XT is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be achived by QW-SCH structure∗2. Fine adjustment of the oscillation wavelength is possible by controlling the temperature using the built-in TE cooler (Peltier element). ∗1 MOCVD: Metal Organic Chemical Vapor Deposition ∗2 QW-SCH: Quantum Well Separate Confinement Heterostructure Features • High power Recommended optical power output: Po = 1.0W • Low operating current: Iop = 1.4A (Po = 1.0W) • Flat package with built-in photo diode, TE cooler, and thermistor Equivalent Circuit TE Cooler N P LD TH 1 2 3 4 PD 5 6 7 Pin Configuration (Top View) No. Function 1 TE cooler (negative) 2 Thermistor lead 1 3 Thermistor lead 2 4 Laser diode (anode) 5 Laser diode (cathode) Structure AlGaAs quantum well structure laser diode 6 Photodiode (cathode) 7 Photodiode (anode) Operating Lifetime MTTF 10,000H (effective value) at Po = 1.0W, Tth = 25°C 8 TE cooler (positive) Applications • Solid state laser excitation • Medical use • Material processes • Measurement Absolute Maximum Ratings (Tth = 25°C) • Optical power output Po • Reverse voltage VR LD PD • Operating temperature (Tth) Topr • Storage temperature Tstg 1.1 2 15 –10 to +30 –40 to +85 8 W V V °C °C Warranty This warranty period shall be 90 days after receipt of the product or 1,000 hours operation time whichever is shorter. Sony Quality Assurance Department shall analyze any product that fails during said warranty period, and if the analysis results show that the product failed due to material or manufacturing defects on the part of Sony, the product shall be replaced free of charge. Laser diodes naturally have differing lifetimes which follow a Weibull distribution. Special warranties are also available. 1 8 Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E93208B02-PS SLD323XT Electrical and Optical Characteristics Item (Tth: Thermistor temperature, Tth = 25°C) Symbol Min. Conditions Typ. Max. Unit 0.3 0.5 A Threshold current Ith Operating current Iop PO = 1.0W 1.4 2.0 A Operating voltage Wavelength∗ Vop PO = 1.0W 2.1 3.0 V λp PO = 1.0W 790 840 nm Monitor current Imon PO = 1.0W VR = 10V 0.3 1.5 6.0 mA 20 30 40 degree 4 9 17 degree ±100 µm ±3 degree Perpendicular Radiation angle Positional accuracy θ⊥ Parallel θ// Position ∆X, ∆Y Angle ∆φ⊥ PO = 1.0W PO = 1.0W Differential efficiency ηD PO = 1.0W Thermistor resistance Rth Tth = 25°C 0.5 0.9 W/A 10 kΩ ∗ Wavelength Selection Classification Type Wavelength (nm) SLD323XT-1 795 ± 5 SLD323XT-2 810 ± 10 SLD323XT-3 830 ± 10 Type Wavelength (nm) SLD323XT-21 798 ± 3 SLD323XT-24 807 ± 3 SLD323XT-25 810 ± 3 Handling Precautions Eye protection against laser beams The optical output of laser diodes ranges from several mW to 3W. However the optical power density of the laser beam at the diode chip reaches 1MW/cm2. Unlike gas lasers, since laser diode beams are divergent, uncollimated laser diode beams are fairly safe at a laser diode. For observing laser beams, ALWAYS use safety goggles that block infrared rays. Usage of IR scopes, IR cameras and fluorescent plates is also recommended for monitoring laser beams safely. Lens Laser diode Optical material Safety goggles for protection from laser beam IR fluorescent plate C ATC AP Optical boad Optical power output control device temperature control device –2– SLD323XT Example of Representative Characteristics Optical power output vs. Forward current characteristics Optical power output vs. Monitor current characteristics 1500 Tth = 25°C Tth = 0°C 1200 Tth = –10°C 1000 Tth = 25°C Po – Optical power output [mW] Po – Optical power output [mW] Tth = 15°C Tth = 30°C 900 600 300 0 400 800 1200 1600 Tth = 0°C Tth = –10°C Tth = 30°C 500 0 2000 0 1.5 IF – Forward current [mA] Imon – Monitor current [mA] Threshold current vs. Temperature characteristics Power dependence of far field pattern (Parallel to junction) 1000 Radiation intensity (optional scale) 500 PO = 1000mW PO = 800mW PO = 600mW PO = 400mW PO = 200mW 100 –10 0 10 20 30 –90 –60 –30 0 30 60 90 Tth – Thermistor temperature [°C] Angle [degree] Power dependence of far field pattern (Perpendicular to junction) Tempareture dependence of far field pattern (Parallel to junction) PO = 1000mW Radiation intensity (optional scale) Tth = 25°C Radiation intensity (optional scale) Ith – Threshold current [mA] Tth = 25°C PO = 1000mW PO = 800mW PO = 600mW Tth = 25°C Tth = 10°C PO = 400mW PO = 200mW –90 –60 –30 0 30 60 Tth = –5°C 90 –90 Angle [degree] –60 –30 0 30 Angle [degree] –3– 60 90 SLD323XT Temperature dependence of far field pattern (Perpendicular to junction) Dependence of wavelength Po = 1000mW 820 λp – Wavelength [nm] Radiation intensity (optional scale) PO = 1000mW 810 800 Tth = 25°C Tth = 10°C Tth = –5°C –90 –60 –30 0 30 60 790 –10 90 0 Angle [degree] 10 20 30 Tth – Thermistor temperature [°C] Thermistor characteristics Differential efficiency vs. Temperature characteristics Rth – Thermistor resistance [kΩ] ηD – Differential efficiency [mW/mA] 50 1.0 0.5 0 10 5 1 –10 0 10 20 30 40 50 60 70 –10 0 10 20 30 Tth – Thermistor temperature [°C] Tth – Thermistor temperature [°C] TE cooler characteristics TE cooler characteristics 1 TE cooler characteristics 2 10 10 Tc = 33°C Tth = 25°C IT = 2.5A 5 2.0A 5 4 1.5A 3 1.0A 4 Q 2.0A ∆T 1 5A 100 5A 0 0 ∆T – Temperature difference [°C] 1. 1. 0. 2. 50 3 1.0A VS 5A 1. 5A 0. 0 5 0.5A 0A 1. 0 5 1.5A 2 ∆T 0.5A 2.0A 0A VS 5A Q 2 2.0A 1 2. 5A 50 100 ∆T – Temperature difference [°C] ∆T: Tc – Tth Tth: Thermistor temperature Tc: Case temperature –4– 0 VT – Pin voltage [V] IT = 2.5A Q – Absorbed heat [W] ∆T VS VT VT – Pin voltage [V] Q – Absorbed heat [W] ∆T VS V SLD323XT Power dependence of spectrum 1.0 1.0 Tth = 25°C Po = 400mW Tth = 25°C Po = 600mW 0.8 Relative rediant intensity Relative rediant intensity 0.8 0.6 0.4 0.2 0.6 0.4 0.2 802 804 806 808 810 802 Wavelength [nm] 806 808 810 Wavelength [nm] 1.0 1.0 Tth = 25°C Po = 800mW Tth = 25°C Po = 1000mW 0.8 Relative rediant intensity 0.8 Relative rediant intensity 804 0.6 0.4 0.2 0.6 0.4 0.2 802 804 806 808 810 802 Wavelength [nm] 804 806 808 Wavelength [nm] –5– 810 SLD323XT Temperature dependence of spectrum (Po = 1000mW) 1.0 1.0 Tth = –10°C Tth = 0°C 0.8 Relative radiant intensity Relative radiant intensity 0.8 0.6 0.4 0.2 790 0.6 0.4 0.2 795 800 805 810 815 820 790 795 Wavelength [nm] 800 805 810 1.0 Tth = 30°C 0.8 Relative radiant intensity 0.8 Relative radiant intensity 820 1.0 Tth = 25°C 0.6 0.4 0.2 790 815 Wavelength [nm] 0.6 0.4 0.2 795 800 805 810 815 820 790 Wavelength [nm] 795 800 805 810 Wavelength [nm] –6– 815 820 SLD323XT Unit: mm M – 273(LO – 10) + 0.05 4 – Ø3.0 0 Window Glass 28.0 ± 0.5 + 2.0 8.0 – 1.0 Ø5.0 * 7.5 ± 0.1 15.0 ± 0.05 14.0 33.0 ± 0.05 4 – R1.2 ± 0.3 8 – Ø0.6 2.54 19.0 *16.5 ± 0.1 3.0 Reference Plane 11.35 ± 0.1 28.0 ± 0.5 7.5 ± 0.2 0.65MAX 38.0 ± 0.5 LD Chip 10.4 Package Outline *Distance between pilot hole and emittng area PACKAGE STRUCTURE SONY CODE M-273(LO-10) PACKAGE WEIGHT 43g EIAJ CODE JEDEC CODE –7– Sony Corporation