BC107 BC108 LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS DESCRIPTION The BC107 and BC108 are silicon planar epitaxial NPN transistors in TO-18 metal case. They are suitable for use in driver stages, low noise input stages and signal processing circuits of television reveivers. The PNP complemet for BC107 is BC177. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit BC107 BC108 V CBO Collector-Base Voltage (IE = 0) 50 30 V CEO Collector-Emitter Voltage (I B = 0) 45 20 V V EBO Emitter-Base Voltage (I C = 0) 6 5 V IC Collector Current o P t ot Total Dissipation at T amb ≤ 25 C o at T case ≤ 25 C T stg St orage Temperature Tj Max. Operating Junction Temperature November 1997 V 100 mA 0.3 0.75 W W -55 to 175 o C 175 o C 1/6 BC107/BC108 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max o 200 500 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CBO Parameter Collector Cut-off Current (IE = 0) Test Cond ition s for BC107 V CB = 40 V V CB = 40 V for BC108 V CB = 20 V V CB = 20 V Min. Typ . Max. Un it o 15 15 nA µA o 15 15 µA µA T ca s e = 150 C T ca s e = 150 C Collector-Base Breakdown Voltage (IE = 0) I C = 10 µA for BC107 for BC108 50 30 V V V ( BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) I C = 10 mA for BC107 for BC108 45 20 V V V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) I E = 10 µA for BC107 for BC108 6 5 V V V CE(sat )∗ Collector-Emitter Saturation Voltage I C = 10 mA I C = 100 mA IB = 0.5 mA I B = 5 mA 70 200 V BE(s at)∗ Base-Emitter Saturation Voltage I C = 10 mA I C = 100 mA IB = 0.5 mA I B = 5 mA 750 950 V BE(on) ∗ Base-Emitter O n Voltage I C = 2 mA I C = 10 mA VCE = 5 V V CE = 5 V h FE∗ DC Current G ain I C = 2 mA for BC107 for BC107 for BC107 for BC108 for BC108 for BC108 for BC108 I C = 10 µA for BC107 for BC107 for BC107 for BC108 for BC108 for BC108 for BC108 VCE = 5 V V (BR)CBO h fe ∗ Small Signal Current Gain Gr. A Gr. B Gr. C V CE = 5 V 650 700 110 110 200 110 110 200 420 Gr. A Gr. B 40 Gr. A Gr. B Gr. C 40 100 I C = 2 mA V CE = 5 V f = 1KHz for BC107 for BC107 Gr. A for BC107 Gr. B for BC108 for BC108 Gr. A for BC108 Gr. B for BC108 Gr. C I C = 10 mA VCE = 10 V f = 100 MHz ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 % 2/6 Gr. A Gr. B 550 250 600 mV mV 700 770 450 220 450 800 220 450 800 120 90 150 120 90 150 270 250 190 300 370 190 300 500 2 mV mV mV mV BC107/BC108 ELECTRICAL CHARACTERISTICS (continued) Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it 6 pF C CBO Collector Base Capacitance IE = 0 V CB = 10 V f = 1MHz 4 C EBO Emitter Base Capacitance IC = 0 V EB = 0.5 V f = 1MHz 12 NF Noise Figure I C = 0.2 mA V CE = 5 V B = 200Hz f = 1KHz R g = 2KΩ hie Input Impedance I C = 2 mA for BC107 for BC107 for BC107 for BC108 for BC108 for BC108 for BC108 hre h oe Reverse Voltage Ratio Output Admittance I C = 2 mA for BC107 for BC107 for BC107 for BC108 for BC108 for BC108 for BC108 I C = 2 mA for BC107 for BC107 for BC107 for BC108 for BC108 for BC108 for BC108 V CE = 5 V Gr. A Gr. B Gr. C Gr. A Gr. B Gr. C Gr. A Gr. B Gr. A Gr. B Gr. C dB 4 3 4.8 5.5 3 4.8 7 KΩ KΩ KΩ KΩ KΩ KΩ KΩ 2.2 1.7 2.7 3.1 1.7 2.7 3.8 10 -4 -4 10 10 -4 -4 10 -4 10 -4 10 -4 10 30 13 26 30 13 26 34 µS µS µS µS µS µS µS f = 1KHz Gr. A Gr. B V CE = 5 V 10 f = 1KHz Gr. A Gr. B V CE = 5 V 2 pF f = 1KHz ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 % DC Normalized Current Gain. Collector--emitter Saturation Voltage. 3/6 BC107/BC108 Collector-base Capacitance. Power Rating Chart. 4/6 Transition Frequency. BC107/BC108 TO-18 MECHANICAL DATA mm inch DIM. MIN. A TYP. MAX. MIN. TYP. 12.7 MAX. 0.500 B 0.49 0.019 D 5.3 0.208 E 4.9 0.193 F 5.8 0.228 G 2.54 0.100 H 1.2 0.047 I 1.16 0.045 L 45o 45o D A G I E F H B L C 0016043 5/6 BC107/BC108 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 6/6