2N4033 GENERAL PURPOSE AMPLIFIER AND SWITCH DESCRIPTION The 2N4033 is a silicon planar epitaxial PNP transistors in Jedec TO-39 metal case primary intended for large signal, low noise industrial applications. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-Base Voltage (IE = 0) -80 V V CEO Collector-Emitter Voltage (I B = 0) -80 V V EBO Emitter-Base Voltage (I C = 0) -5 V Collector Current -1 A 0.8 4 W W IC o P t ot Total Dissipation at T amb ≤ 45 C at T case ≤ 45 o C T stg St orage Temperature Tj Max. Operating Junction Temperature November 1997 -55 to 200 o C 200 o C 1/6 2N4033 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max o 44 218 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CBO Parameter Collector Cut-off Current (IE = 0) Test Cond ition s V CE = -60 V V CE = -60 V Min. T amb = 150 o C Typ . Max. Un it -50 -50 nA µA V ( BR)CBO ∗ Collector-Base Breakdown Voltage (I E = 0) I C = -10 µA -80 V V ( BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) I C = -10 mA -80 V V (BR)EBO ∗ Emitter-Base Breakdown Voltage (I C = 0) I E = -10 µA -5 V V CE(sat )∗ Collector-Emitter Saturation Voltage I C = -150 mA I C = -500 mA IB = -15 mA IB = -50 mA -0.15 -0.5 V V V BE(s at)∗ Base-Emitter Saturation Voltage I C = -150 mA I C = -500 mA IB = -15 mA IB = -50 mA -0.9 -1.1 V V DC Current G ain I C = -100 µA I C = -100 mA I C = -500 mA I C = -1 A I C = -100 mA T amb = -55 oC hFE∗ fT 75 100 70 25 300 40 Transition F requency I C = -50 mA V CE = -10 V f = 100 MHz C EBO Emitter Base Capacitance IE = 0 V EB = -0.5 V C CBO Collector Base Capacitance IE = 0 V CB = -10 V t s∗∗ Storage Time t f ∗∗ t on∗∗ 500 MHz f = 1MHz 110 pF f = 1MHz 20 pF I C = -500 mA V CE = -30 V I B1 = -IB2 = -50 mA 350 ns Fall T ime I C = -500 mA V CE = -30 V I B1 = -IB2 = -50 mA 50 ns Turn-on T ime I C = -500 mA V CE = -30 V I B1 = -IB2 = -50 mA 100 ns ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 % ∗∗ See Test Circuit 2/6 V CE = -5 V V CE = -5 V V CE = -5 V VCE = -5 V V CE = -5 V 150 2N4033 Collector-emitter Saturation Voltage. Base-emitter Saturation Voltage. Transition Frequency. Collector-base Capacitance. 3/6 2N4033 Test Circuit for ton, ts, tf. PULSE GENERATOR : tr, tf < 20 ns PW = 1.0 µs ZIN = 50 Ω DC < 2 % 4/6 TO OSCILLOSCOPE : tr ≈ 10 ns ZIN > 100 KΩ 2N4033 TO-39 MECHANICAL DATA mm inch DIM. MIN. A TYP. MAX. MIN. 12.7 TYP. MAX. 0.500 B 0.49 0.019 D 6.6 0.260 E 8.5 0.334 F 9.4 0.370 G 5.08 0.200 H 1.2 0.047 I 0.9 0.035 45o (typ.) L D A G I E F H B L P008B 5/6 2N4033 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 6/6