LND150 N-Channel Depletion-Mode MOSFET Ordering Information Product marking for TO-243AA: Order Number / Package BVDSX / BVDGX RDS(ON) (max) IDSS (min) TO-92 TO-243AA* Die 500V 1.0KΩ 1.0mA LND150N3 LND150N8 LND150ND LN1E❋ * Same as SOT-89. Product shipped on 2000 piece carrier tape reels. Where ❋ = 2-week alpha date code Features Advanced DMOS Technology ❏ ESD gate protection The LND1 is a high voltage N-channel depletion mode (normallyon) transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. ❏ Free from secondary breakdown ❏ Low power drive requirement The LND1 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp generation and amplification. ❏ Ease of paralleling ❏ Excellent thermal stability ❏ Integral source-drain diode ❏ High input impedance and low CISS Package Options Applications ❏ Solid state relays ❏ Normally-on switches ❏ Converters ❏ Power supply circuits ❏ Constant current sources S ❏ Input protection circuits G S D TO-243AA (SOT-89) Absolute Maximum Ratings Drain-to-Source Voltage BVDSX Drain-to-Gate Voltage BVDGX Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. SGD TO-92 ±20V -55°C to +150°C 300°C Note: See Package Outline section for dimensions. 12/13/01 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the 1 refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, LND150 Thermal Characteristics Package ID (continuous)* ID (pulsed) Power Dissipation @TA = 25°C °C/W °C/W 30mA 30mA 0.74W 125 30mA † TO-92 TO-243AA 30mA 1.6W θjc 31 IDR IDRM* 170 30mA 30mA † 30mA 30mA θja 105 * ID (continuous) is limited by max rated Tf. † Mounted on FR5 Board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate. Electrical Characteristics (@ 25°C unless otherwise specified) Symbol Parameter Min BVDSX Drain-to-Source Breakdown Voltage 500 VGS(OFF) Gate-to-Source OFF Voltage -1.0 Typ ∆VGS(OFF) Change in VGS(OFF) with Temperature Max Unit Conditions V VGS = -10V, ID = 1.0mA -3.0 V VDS = 25V, ID = 100nA 5.0 mV/°C VDS = 25V, ID = 100nA IGSS Gate Body Leakage Current 100 nA VGS = ±20V, VDS = 0V ID(OFF) Drain-to-Source Leakage Current 100 nA VGS = -10V, VDS = 450V 100 µA VGS = -10V, VDS = 0.8V max rating TA =125°C 3.0 mA VGS = 0V, VDS = 25V 1000 Ω VGS = 0V, ID = 0.5mA 1.2 %/°C VGS = 0V, ID = 0.5mA Ω VGS = 0V, ID = 1.0mA IDSS Saturated Drain-to-Source Current 1.0 RDS(ON) Static Drain-to-Source ON-State Resistance 850 ∆RDS(ON) Change in RDS(ON) with Temperature GFS Forward Transconductance 1.0 2.0 m CISS Input Capacitance 7.5 10 COSS Output Capacitance 2.0 3.5 CRSS Reverse Transfer Capacitance 0.5 1.0 td(ON) Turn-ON Delay Time 0.09 tr Rise Time 0.45 td(OFF) Turn-OFF Delay Time 0.1 tf Fall Time 1.3 VSD Diode Forward Voltage Drop trr Reverse Recovery Time pF VGS = -10V, VDS = 25V f = 1 MHz µs VDD = 25V, ID = 1.0mA, RGEN = 25Ω 0.9 200 V VGS = -10V, ISD = 1.0mA ns VGS = -10V, ISD = 1.0mA Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V 90% PULSE GENERATOR INPUT -10V 10% t(ON) td(ON) VDD 10% td(OFF) tF 90% OUTPUT D.U.T. INPUT 10% OUTPUT 0V RL Rgen t(OFF) tr VDD 90% 2 LND150 Typical Performance Curves Output Characteristics Saturation Characteristics 6 6 5 4 3 0.5V 2 0V 1 ID (milliamps) ID (milliamps) VGS = 1.0V VGS =1.0V 5 -0.5V -1.0V 0 0 250 4 3 0.5V 2 0V 1 -0.5V -1.0V 0 500 0 1 2 3 4 5 VDS (volts) VDS (volts) Transconductance vs. Drain Current Power Dissipation vs. Ambient Temperature 10 2 VDS = 400V TO-243AA TA = -55°C 6 PD (watts) GFS (millisiemens) 8 TA = 25°C 4 TA = 125°C 1 TO-92 2 0 0 0 2 4 6 0 10 8 50 75 100 125 TA (°C) Maximum Rated Safe Operating Area Thermal Response Characteristics 100 150 1.0 TO-92 (pulsed) Thermal Resistance (normalized) TO-92 (DC) TO-243AA (DC) TA = 25°C 10 ID (milliamps) 25 ID (milliamps) 1 10 100 0.6 1000 VDS (volts) TO-243AA TA = 25°C PD = 1.6W 0.4 TO-92 P D = 1W T C = 25°C 0.2 0 0.001 0.1 1 0.8 0.01 0.1 tP (seconds) 3 1.0 10 LND150 Typical Performance Curves BVDSS Variation with Temperature ID vs. RSOURCE 1.4 VGS = -5V 1.1 ID ↓ LND1 25°C 1.0 125°C ID (milliamps) BVDSS (normalized) 1.2 1.0 RSOURCE 0.8 0.6 0.4 0.2 0.9 -50 0 50 100 0.0 10 150 100 1K 10K 100K Tj (°C) RSOURCE (ohms) Transfer Characteristics VGS(OFF) and RDS Variation with Temperature 1.8 10 2.0 1.6 VGS(OFF) (normalized) ID (milliamps) TA = -55°C TA = 25°C TA = 125°C 5 RDS(ON) @ ID = 1mA 1.6 1.4 1.2 1.2 0.8 RDS(ON) (normalized) VDS = 400V VGS(OFF) @ 100nA 1.0 0.4 0 0.8 -1 0 1 2 3 -50 0 50 VGS (volts) 100 150 Tj (°C) Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics 10 10 VGS = -10V 8.7pF 5 VGS (volts) C (picofarads) CISS 5 VDS = 20V 40V 60V 0 COSS CRSS -5 0 0 10 20 30 40 0 0.1 0.2 0.3 QC (nanocoulombs) VDS (volts) 12/13/010 ©2001 Supertex Inc. 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