A-POWER AP9972GI

AP9972GI
Pb Free Plating Product
Advanced Power
Electronics Corp.
▼ Low Gate Charge
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
▼ Single Drive Requirement
▼ Lower On-resistance
BVDSS
60V
RDS(ON)
18mΩ
ID
35A
G
S
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G D
S
TO-220CFM(I)
The TO-220CFM isolation package is universally preferred for all
commercial-industrial through hole applications.
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
±25
V
[email protected]=25℃
Continuous Drain Current, VGS @ 10V
35
A
[email protected]=100℃
Continuous Drain Current, VGS @ 10V
22
A
1
IDM
Pulsed Drain Current
120
A
[email protected]=25℃
Total Power Dissipation
31.3
W
Linear Derating Factor
0.25
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
4
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
62
℃/W
Data and specifications subject to change without notice
200105051
AP9972GI
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
60
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.06
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=23A
-
-
18
mΩ
VGS=4.5V, ID=12A
-
-
22
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VDS=10V, ID=23A
-
40
-
S
VDS=60V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=48V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±25V
-
-
±100
nA
ID=23A
-
35
56
nC
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
2
VGS=0V, ID=250uA
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=48V
-
9.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
20
-
nC
VDS=30V
-
12
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=35A
-
37
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
47
-
ns
tf
Fall Time
RD=0.86Ω
-
59
-
ns
Ciss
Input Capacitance
VGS=0V
-
3160 5060
pF
Coss
Output Capacitance
VDS=25V
-
280
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
230
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.6
2.4
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=23A, VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time
IS=23A, VGS=0V,
-
36
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
45
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Starting Tj=25oC , VDD=30V , L=1mH , RG=25Ω , IAS=30A.
AP9972GI
120
120
10V
7.0V
10V
7.0V
o
T C = 150 C
T C =25 C
ID , Drain Current (A)
ID , Drain Current (A)
90
o
90
5.0V
4.5V
60
5.0V
4.5V
60
30
V G =3.0V
30
V G =3.0V
0
0
0
0
2
4
6
2
8
4
6
8
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
20
1.6
I D = 12 A
T C =25 o C
I D =23A
V G =10V
Normalized RDS(ON)
1.4
RDS(ON) (mΩ )
18
16
1.2
1.0
0.8
14
0.6
2
4
6
8
10
-50
V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
20
1.7
IS(A)
T j =150 o C
Normalized VGS(th) (V)
15
T j =25 o C
10
1.2
0.7
5
0.2
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
AP9972GI
f=1.0MHz
12
10000
V DS =48V
V DS =38V
V DS =30V
8
C iss
C (pF)
VGS , Gate to Source Voltage (V)
I D = 23 A
10
6
1000
4
C oss
C rss
2
0
100
0
20
40
60
1
80
5
9
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1000
Normalized Thermal Response (R thjc)
1
100
ID (A)
13
V DS , Drain-to-Source Voltage (V)
100us
10
1ms
10ms
100ms
o
T C =25 C
Single Pulse
1
DC
0.1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
Single Pulse
0.01
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
100
VG
V DS =5V
80
ID , Drain Current (A)
T j =25 o C
QG
T j =150 o C
4.5V
60
QGS
QGD
40
20
Charge
0
0
2
4
6
8
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
Q