A-POWER AP3402GEJ

AP3402GEH/J
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
D
▼ Single Drive Requirement
▼ Surface Mount Package
35V
RDS(ON)
18mΩ
ID
G
▼ RoHS Compliant
BVDSS
38A
S
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and costeffectiveness.
GD
The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP3402GEJ) are available for low-profile applications.
G
D
S
TO-252(H)
TO-251(J)
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
35
V
VGS
Gate-Source Voltage
±20
V
[email protected]=25℃
Continuous Drain Current, VGS @ 10V
38
A
[email protected]=100℃
Continuous Drain Current, VGS @ 10V
24
A
1
IDM
Pulsed Drain Current
110
A
[email protected]=25℃
Total Power Dissipation
34.7
W
Linear Derating Factor
0.27
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
3.6
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
℃/W
Data and specifications subject to change without notice
200420052-1/4
AP3402GEH/J
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
35
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.03
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=25A
-
-
18
mΩ
VGS=4.5V, ID=20A
-
-
32
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VDS=10V, ID=25A
-
22
-
S
VDS=30V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=24V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±20V
-
-
±30
uA
ID=25A
-
10.5
17
nC
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
2
VGS=0V, ID=250uA
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=25V
-
4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
6
-
nC
VDS=15V
-
9
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=25A
-
78
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
19
-
ns
tf
Fall Time
RD=0.6Ω
-
4
-
ns
Ciss
Input Capacitance
VGS=0V
-
950
1520
pF
Coss
Output Capacitance
VDS=25V
-
160
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
110
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2.5
3.8
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=25A, VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time
IS=20A, VGS=0V,
-
22
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
10
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
2/4
AP3402GEH/J
80
100
10V
7.0V
o
T C =25 C
10V
7.0V
T C =150 o C
60
ID , Drain Current (A)
ID , Drain Current (A)
80
60
5.0V
40
4.5V
5.0V
40
4.5V
20
20
V G =3.0V
V G =3.0V
0
0
0
1
2
3
4
5
6
0
1
3
4
5
6
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
60
1.5
I D =20A
I D =25A
V G =10V
T C =25 o C
Normalized RDS(ON)
50
RDS(ON) (mΩ)
2
V DS , Drain-to-Source Voltage (V)
40
30
1.2
0.9
20
10
0.6
2
4
6
8
10
-50
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
1.5
15
1.2
Normalized VGS(th) (V)
IS(A)
50
100
150
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
20
T j =150 o C
0
T j , Junction Temperature ( o C)
T j =25 o C
10
5
0
0.9
0.6
0.3
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP3402GEH/J
f=1.0MHz
10000
I D =25A
12
V DS =15V
V DS =20V
V DS =25V
10
8
C (pF)
VGS , Gate to Source Voltage (V)
14
6
C iss
1000
4
2
C oss
C rss
100
0
0
5
10
15
20
1
5
9
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
100
100us
10
1ms
10ms
100ms
1s
DC
1
T C =25 o C
Single Pulse
0
Normalized Thermal Response (Rthjc)
1000
ID (A)
13
V DS , Drain-to-Source Voltage (V)
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
50
VG
V DS =5V
ID , Drain Current (A)
40
QG
T j =25 o C
30
4.5V
T j =150 o C
QGS
QGD
20
10
Charge
Q
0
0
2
4
6
8
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4