A-POWER AP30N30W

AP30N30W
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test
D
▼ Simple Drive Requirement
▼ Lower On-resistance
250V
RDS(ON)
68mΩ
ID
G
▼ RoHS Compliant
BVDSS
36A
S
Description
AP30N30 from APEC provide the designer with the best combination of fast
switching , low on-resistance and cost-effectiveness .
The TO-3P package is preferred for commercial & industrial applications
with higher power level preclusion than TO-220 device.
G
TO-3P
D
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
250
V
VGS
Gate-Source Voltage
±30
V
[email protected]=25℃
Continuous Drain Current, VGS @ 10V
36
A
[email protected]=100℃
Continuous Drain Current, VGS @ 10V
23
A
144
A
208
W
1.7
W/℃
450
mJ
30
A
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
Linear Derating Factor
3
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
0.6
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
40
℃/W
Data and specifications subject to change without notice
200916052-1/4
AP30N30W
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
250
-
-
V
-
0.24
-
V/℃
-
-
68
mΩ
1.5
-
3.5
V
VDS=10V, ID=15A
-
23
-
S
VDS=250V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (T j=150 C)
VDS=200V ,VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS= ±30V
-
-
±1
uA
ID=15A
-
63
100
nC
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
2
VGS=10V, ID=15A
VDS=VGS, ID=250uA
o
Drain-Source Leakage Current (T j=25 C)
o
IGSS
VGS=0V, ID=1mA
2
Max. Units
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=200V
-
19
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
14
-
nC
VDS=125V
-
28
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=15A
-
36
-
ns
td(off)
Turn-off Delay Time
RG=10Ω,VGS=10V
-
84
-
ns
tf
Fall Time
RD=8.3Ω
-
45
-
ns
Ciss
Input Capacitance
VGS=0V
-
4290 6900
pF
Coss
Output Capacitance
VDS=25V
-
550
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
6
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.9
3
Ω
Min.
Typ.
IS=36A, VGS=0V
-
-
1.5
V
IS=15A, VGS=0V
-
235
-
ns
dI/dt=100A/µs
-
2.24
-
µC
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
3.Starting Tj=25oC , VDD=50V , L=1mH , RG=25Ω , IAS=30A.
2/4
AP30N30W
40
50
o
10V
7.0V
6.0V
ID , Drain Current (A)
40
30
5.0V
20
10V
7.0V
6.0V
5.0V
T C = 150 o C
ID , Drain Current (A)
T C = 25 C
30
20
V G =4. 5 V
10
10
V G =4. 5 V
0
0
0
2
4
6
0
8
2
Fig 1. Typical Output Characteristics
6
8
Fig 2. Typical Output Characteristics
160
2.8
I D =15A
V G =10V
I D =15A
o
T C =25 C
2.3
Normalized RDS(ON)
120
80
1.8
1.3
0.8
0.3
40
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
15
2
Normalized VGS(th) (V)
12
IS(A)
RDS(ON) (mΩ )
4
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
9
T j =150 o C
T j =25 o C
6
1.5
1
0.5
3
0
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
o
T j ,Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP30N30W
f=1.0MHz
16
10000
C iss
V DS = 120 V
V DS = 160 V
V DS = 200 V
12
1000
C oss
C (pF)
VGS , Gate to Source Voltage (V)
I D = 15 A
8
100
10
4
C rss
1
0
0
20
40
60
1
80
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
1000
100
ID (A)
9
V DS ,Drain-to-Source Voltage (V)
100us
10
1ms
10ms
100ms
1s
DC
1
o
T c =25 C
Single Pulse
0.1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
1
10
100
1000
0.00001
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
40
VG
V DS =5V
T j =25 o C
ID , Drain Current (A)
30
T j =150 o C
QG
4.5V
QGS
20
QGD
10
Charge
Q
0
0
2
4
6
8
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4