2SC2879 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2SC2879 is a 12.5 V transistor designed primarily for SSB linear power amplifier applications up tp 28 MHz. PACKAGE STYLE .500 4L FLG .112x45° L A FEATURES: E FULL R • PG = 13 Typ. min. at 100 W/28 MHz • IMD3 = -24 dBc max. at 100 W(PEP) • Omnigold™ Metalization System C B B E E D G H F MAXIMUM RATINGS IC VCBO Ø.125 NOM. C I J K 25 A DIM MINIMUM inches / mm inches / mm 45 V A .220 / 5.59 .230 / 5.84 VCEO 18 V VEBO 4.0 V MAXIMUM .125 / 3.18 B C .245 / 6.22 .255 / 6.48 D .720 / 18.28 .7.30 / 18.54 .125 / 3.18 E F .970 / 24.64 .980 / 24.89 G .495 / 12.57 .505 / 12.83 H .003 / 0.08 .007 / 0.18 I .090 / 2.29 .110 / 2.79 -65 °C to +175 °C J .150 / 3.81 .175 / 4.45 TSTG -65 °C to +175 °C L .980 / 24.89 1.050 / 26.67 θJC 0.6 °C/W PDISS TJ 250 W @ TC = 25 °C CHARACTERISTICS SYMBOL .280 / 7.11 K TC = 25 °C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCES IC = 100 mA 45 V BVCEO IC = 100 mA 18 V BVEBO IE = 10 mA 4.0 V hFE VCE = 5.0 V COB VCB = 12.5 V GP IC = 10 A 10 f = 1.0 MHz f = 28 MHz 13.0 35 VCE = 12.5 V POUT = 100 W Iidle = 100 mA ZIN VCC = 12.5 V POUT = 100 W f = 28 MHz --- ZOUT VCC = 12.5 V POUT = 100 W f = 28 MHz --- ηC IMD3 150 700 pF 15.2 dB -24 % dBc 1.45 – j0.95 --- Ω 1.45 – J1.0 --- Ω A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. --- REV. A 1/1