KTC4374 TRANSISTOR (NPN) SOT-89-3L FEATURES z Small Flat Package z General Purpose Application 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current 400 mA PC Collector Power Dissipation 500 mW Thermal Resistance From Junction To Ambient 250 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 1mA,IE=0 80 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 80 V Emitter-base breakdown voltage V(BR)EBO IE=1mA,IC=0 5 V Collector cut-off current ICBO VCB=80V,IE=0 100 nA Emitter cut-off current IEBO VEB=5V,IC=0 100 nA DC current gain hFE VCE(sat) Collector-emitter saturation voltage VCE=2V, IC=50mA 70 VCE=2V, IC=200mA 50 240 IC=200mA,IB=20mA 0.55 0.4 V 0.8 V Base-emitter voltage VBE VCE=2V, IC=5mA Collector output capacitance Cob VCB=10V,IE=0, f=1MHz 10 pF VCE=10V,IC= 10mA 100 MHz fT Transition frequency CLASSIFICATION OF hFE RANK O Y RANGE 70–140 120–240 MARKING EO EY １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５