PXT3906 TRANSISTOR(PNP) SOT-89 FEATURES z Compliment to PXT3904 z Low current z Low voltage 1. BASE 1 2. COLLECTOR 2 MARKING: 2A Symbol Parameter Value Units V VCBO Collector-Base Voltage -40 VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -0.2 A PC Collector Power Dissipation 0.5 W 3 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) ℃ TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Symbol Test Collector-base breakdown voltage V(BR)CBO IC=-10μA,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -40 V Emitter-base breakdown voltage V(BR)EBO IE=-10μA,IC=0 -6 V Collector cut-off current ICBO VCB=-30V,IE=0 -0.05 μA cut-off current IEBO VEB=-6V,IC=0 -0.05 μA hFE(1) VCE=-1V,IC=-0.1mA 60 hFE(2) VCE=-1V,IC=-1mA 80 hFE(3) VCE=-1V,IC=-10mA 100 hFE(4) VCE=-1V,IC=-50mA 60 hFE(5) VCE=-1V,IC=-100mA 30 VCE(sat)1 IC=-10mA,IB=-1mA -0.25 V VCE(sat)2 IC=-50mA,IB=-5mA -0.4 V VBE(sat)1 IC=-10mA,IB=-1mA -0.85 V VBE(sat)2 IC=-50mA,IB=-5mA -0.95 V Parameter DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage conditions MIN -0.65 TYP MAX UNIT 300 Transition frequency fT VCE=-20V,IC=-10mA,f=100MHz Collector capacitance Cc VCB=-5V,IE=0,f=1MHz 4.5 pF Emitter capacitance Ce VEB=-0.5V,IC=0,f=1MHz 10 pF Noise figure NF 4 dB 35 nS 35 nS 225 nS 75 nS Delay time td Rise time tr Storage time tS Fall time tf VCE=-5V,Ic=-0.1mA,f=10Hz-15.7kHz, RS=1KΩ IC=-10mA , IB1=-IB2= -1mA 250 MHz １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ PXT3906 Typical characteristics ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５