KTC4379 TRANSISTOR (NPN) SOT-89 1. BASE FEATURES Low saturation voltage z High speed switching time z Complementary to KTA1666 z 2. COLLECTOR 1 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 2 A PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=1mA, IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA, IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=1mA, IC=0 5 V Collector cut-off current ICBO VCB=50V, IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V, IC=0 0.1 μA hFE(1) VCE=2V, IC=500mA 70 hFE(2) VCE=2V, IC=1.5A 40 Collector-emitter saturation voltage VCE(sat) IC=1A, IB=50mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=1A, IB=50mA 1.2 V DC current gain fT Transition frequency Collector output capacitance Switching Time Turn on Time ton Storage Time tstg Fall Time CLASSIFICATION OF Rank Range Marking Cob 240 VCE=2V, IC=500mA 120 MHz VCB=10V, IE=0, f=1MHz 30 pF 0.1 VCC=30V, IC=1A, IB1=-IB2=-0.05A tf 1.0 0.1 hFE(1) O Y 70-140 120-240 UO UY １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ μs KTC4379 Typical Characteristics ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ KTC4379 ３ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５