isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6837 DESCRIPTION · Collector-Emitter Sustaining Voltage: VCEO(SUS) = 450V(Min) ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications. Typical applications: ·Switching regulators ·Inverters ·Motor controls ·Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage 850 V VCEO(SUS) Collector-Emitter Voltage 450 V Emitter-Base Voltage 6 V IC Collector Current-Continuous 20 A ICM Collector Current-Peak 30 A IB Base Current-Continuous 15 A IBM Base Current-Peak 20 A PC Collector Power Dissipation@TC=25℃ 250 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ VEBO B THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.7 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6837 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC=100mA ; IB=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 1.2A 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 15A; IB= 2A IC= 15A; IB= 2A,TC=100℃ 3.0 3.0 V Base-Emitter Saturation Voltage IC= 15A; IB= 2A IC= 15A; IB= 2A,TC=100℃ 1.5 1.5 V ICEV Collector Cutoff Current VCEV=850V;VBE(off)= 1.5V VCEV=850V;VBE(off)= 1.5V;TC=100℃ 0.25 1.5 mA ICER Collector Cutoff Current VCE= 850V; RBE= 50Ω,TC= 100℃ 2.5 mA IEBO Emitter Cutoff Current VEB= 6.0V; IC=0 1.0 mA hFE-1 DC Current Gain IC= 15A ; VCE= 5V 7.5 hFE-2 DC Current Gain IC= 20A ; VCE= 5V 5 Current Gain-Bandwidth Product IC= 0.25A ;VCE= 10V; ftest=10MHz 10 75 MHz Output Capacitance IE= 0; VCB= 10V; ftest=1.0kHz 100 500 pF 0.02 0.1 μs 0.2 0.5 μs 1.2 2.7 μs 0.2 0.35 μs VBE(sat) fT COB CONDITIONS MIN TYP. MAX 450 UNIT V 30 Switching times;Resistive Load td Delay Time tr Rise Time ts Storage Time tf Fall Time isc Website：www.iscsemi.cn IC= 15A , VCC= 250V; IB1= 2A; IB2= -4A; PW= 30μs; RB2= 1.6Ω Duty Cycle≤2.0% 2