ISC 2SB1568

Inchange Semiconductor
Product Specification
2SB1568
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220F package
・Complement to type 2SD2399
・High DC current gain.
・Low saturation voltage.
・DARLINGTON
APPLICATIONS
・For power amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-80
V
VCEO
Collector-emitter voltage
Open base
-80
V
VEBO
Emitter-base voltage
Open collector
-7
V
IC
Collector current
-4
A
ICM
Collector current-peak
-6
A
PC
Collector dissipation
TC=25℃
30
W
2
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SB1568
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-1mA; IB=0
-80
V
V(BR)CBO
Collector-base breakdown voltage
IC=-50μA; IE=0
-80
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-5mA; IC=0
-7
V
Collector-emitter saturation voltage
IC=-2A ; IB=-4mA
ICBO
Collector cut-off current
IEBO
VCEsat
CONDITIONS
MIN
TYP.
UNIT
-3.0
V
VCB=-80V;IE=0
-100
μA
Emitter cut-off current
VEB=-5V;IC=0
-3.0
mA
hFE
DC current gain
IC=-2A ; VCE=-3V
COB
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
35
pF
fT
Transition frequency
IC=-0.5A ; VCE=-5V;f=10MHz
12
MHz
2
-1.0
MAX
1000
10000
Inchange Semiconductor
Product Specification
2SB1568
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3