ISC 2SB1565

Inchange Semiconductor
Product Specification
2SB1565
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220F package
・Excellent DC current gain characteristics
・Low collector saturation voltage
・Wide SOA (safe operating area)
・Complement to type 2SD2394
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
MAX
UNIT
VCBO
Collector-base voltage
Open emitter
-80
V
VCEO
Collector-emitter voltage
Open base
-60
V
VEBO
Emitter-base voltage
Open collector
-7
V
IC
Collector current
-3
A
ICM
Collector current-peak
-6
A
PC
Collector dissipation
Ta=25℃
2
TC=25℃
25
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SB1565
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-1mA ;IB=0
-60
V
V(BR)CBO
Collector-base breakdown voltage
IC=-50μA ;IE=0
-80
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-50μA ;IC=0
-7
V
VCEsat
Collector-emitter saturation voltage
IC=-2A ;IB=-0.2A
-1.5
V
VBEsat
Base-emitter saturation voltage
IC=-2A ;IB=-0.2A
-1.5
V
ICBO
Collector cut-off current
VCB=-60V; IE=0
-10
μA
IEBO
Emitter cut-off current
VEB=-7V; IC=0
-10
μA
hFE
DC current gain
IC=-0.5A ; VCE=-5V
COB
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
50
pF
fT
Transition frequency
IC=-0.5A ; VCE=-5V
15
MHz
‹
CONDITIONS
hFE Classifications
E
F
100-200
160-320
2
MIN
TYP.
100
MAX
UNIT
320
Inchange Semiconductor
Product Specification
2SB1565
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3