isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SB337 DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= -0.29V(Typ.) @IC= -4A ·High Power Dissipation: PC= 30W(Max)@TC=55℃ APPLICATIONS ·Designed for audio frequency power output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCER Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -10 V IC Collector Current-Continuous -7 A IE Emitter Current-Continuous 7 A IB Base Current-Continuous -1 A PC Collector Power Dissipation @TC=55℃ 30 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ B isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SB337 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CER Collector-Emitter Breakdown Voltage IC= -0.6A; RBE= 68Ω VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A 0.29 V VBE(on) Base-Emitter On Voltage IC= -1A; VCE= -2V 0.38 V ICBO Collector Cutoff Current VCB= -30V; IE= 0 hFE DC Current Gain IC= -1A; VCE= -2V hFE Classifications A B 50-100 80-165 isc Website：www.iscsemi.cn CONDITIONS MIN TYP. MAX -30 B V -1.0 50 UNIT 165 mA