ISC 2SB555

Inchange Semiconductor
Product Specification
2SB555 2SB556
Silicon PNP Power Transistors
DESCRIPTION
・With TO-3 package
・Complement to type 2SD425/426
・High power dissipation
APPLICATIONS
・Power amplifier applications
・Recommended for high-power high-fidelity
audio frequency amplifier output stage
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
2SB555
VCBO
Collector-base voltage
-140
Open base
2SB556
VEBO
Emitter-base voltage
V
-120
2SB555
Collector-emitter voltage
UNIT
-140
Open emitter
2SB556
VCEO
VALUE
V
-120
Open collector
-5
V
IC
Collector current
-12
A
IE
Emitter current
12
A
PC
Collector power dissipation
100
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SB555 2SB556
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2SB555
V(BR)CEO
Collector-emitter
breakdown voltage
MAX
IC=-0.1A ;IB=0
Emitter-base breakdown voltage
2SB555
VCEsat
TYP.
V
-120
IE=-10mA ;IC=0
-5
V
IC=-7A; IB=-0.7A
Collector-emitter
saturation voltage
2SB556
UNIT
-140
2SB556
V(BR)EBO
MIN
-3.0
V
IC=-6A; IB=-0.6A
VBE
Base-emitter on voltage
IC=-7A ; VCE=-5V
-2.5
V
ICBO
Collector cut-off current
VCB=-50V; IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-0.1
mA
hFE
DC current gain
IC=-2A ; VCE=-5V
COB
Output capacitance
IE=0 ; VCB=-10V; f=1.0MHz
fT
Transition frequency
IC=-2A ; VCE=-5V
2
40
140
330
pF
6
MHz
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB555 2SB556
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3