Inchange Semiconductor Product Specification 2SC4793 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SA1837 ・High transition frequency APPLICATIONS ・Power amplifier applications ・Driver stage amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 230 V VCEO Collector-emitter voltage Open base 230 V VEBO Emitter-base voltage Open collector 5 V 1 A 0.1 A IC Collector current IB Base current PC Collector dissipation TC=25℃ 20 Ta=25℃ 2.0 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC4793 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 VCEsat Collector-emitter saturation voltage IC=0.5A IB=50mA 1.5 V VBE Base-emitter voltage IC=0.5A ; VCE=5V 1.0 V ICBO Collector cut-off current VCB=230V; IE=0 1.0 μA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 μA hFE DC current gain IC=0.1A ; VCE=5V COB Output capacitance IE=0; VCB=10V;f=1MHz 20 pF fT Transition frequency IC=0.1A ; VCE=10V 100 MHz 2 MIN TYP. MAX 230 UNIT V 100 320 Inchange Semiconductor Product Specification 2SC4793 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SC4793 Silicon NPN Power Transistors 4