isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2033 DESCRIPTION ·Good Linearity of hFE · Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V(Min) ·Complement to Type 2SB1353 APPLICATIONS ·Designed for use in high voltage driver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5.0 V Collector Current-Continuous 1.5 A Collector Power Dissipation @ Ta=25℃ 1.8 IC PC TJ Tstg W Collector Power Dissipation @TC=25℃ 20 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2033 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 120 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A 2.0 V ICBO Collector Cutoff Current VCB= 120V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC=0 10 μA hFE DC Current Cain IC= 0.1A ; VCE= 5V Current-Gain—Bandwidth Product IC= 0.1A ; VCE= 5V fT PARAMETER B hFE Classifications D E F 60-120 100-200 160-320 isc Website：www.iscsemi.cn 2 60 320 50 MHz