isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB649 DESCRIPTION ·High Collector Current-IC=-1.5A ·High Collector-Emitter Breakdown Voltage: V(BR)CEO=-120V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SD669 APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V -1.5 A A IC Collector Current-Continuous ICP Collector Current-Pulse -3 Collector Power Dissipation @ TC=25℃ 20 W PC Collector Power Dissipation @ Ta=25℃ TJ Tstg Junction Temperature Storage Temperature Range isc Website：www.iscsemi.cn 1 150 ℃ -55~150 ℃ isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB649 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA ; IE= 0 -180 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; RBE= ∞ -120 V V(BR)EBO Emitter-Base Breakdown Vltage IE= -1mA ; IC=0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA -1.0 V VBE(on) Base-Emitter Saturation Voltage IC= -150mA ; VCE= -5V -1.5 V ICBO Collector Cutoff Current VCB= -160V; IE= 0 -10 μA hFE-1 DC Current Gain IC= -150mA ; VCE= -5V 60 hFE-2 DC Current Gain IC=-500mA ; VCE= -5V 30 Current-Gain—Bandwidth Product IC= -150mA ; VCE= -5V 140 MHz Output Capacitance IE= 0; VCB= -10V,ftest= 1MHz 27 pF fT COB PARAMETER hFE-1 Classifications B C D 60-120 100-200 160-320 isc Website：www.iscsemi.cn 2 320