ISC 2SD1271A

Inchange Semiconductor
Product Specification
2SD1271 2SD1271A
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-220Fa package
・Complement to type 2SB946/946A
・Low collector saturation voltage
・Good linearity of hFE
・Large collector current IC
APPLICATIONS
・For power switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
ABSOLUTE MAXIMUM RATINGS AT Ta=25℃
SYMBOL
VCBO
PARAMETER
Collector-base voltage
CONDITIONS
2SD1271
Collector-emitter voltage
2SD1271
Emitter-base voltage
IC
V
150
80
Open base
V
100
2SD1271A
VEBO
UNIT
130
Open emitter
2SD1271A
VCEO
VALUE
Open collector
7
V
Collector current (DC)
7
A
ICM
Collector current-peak
15
A
PC
Collector power dissipation
TC=25℃
40
Ta=25℃
2
w
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SD1271 2SD1271A
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO
PARAMETER
CONDITIONS
2SD1271
Collector-emitter
voltage
MIN
TYP.
MAX
UNIT
80
IC=10mA , IB=0
V
100
2SD1271A
VCEsat
Collector-emitter saturation voltage
IC=5A ;IB=0.25A
0.5
V
VBEsat
Base-emitter saturation voltage
IC=5A ;IB=0.25A
1.5
V
ICBO
Collector cut-off current
VCB=100V; IE=0
10
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
50
μA
hFE-1
DC current gain
IC=0.1A ; VCE=2V
45
hFE-2
DC current gain
IC=3A ; VCE=2V
60
Transition frequency
IC=0.5A ; VCE=10V
fT
260
30
MHz
0.5
μs
1.5
μs
0.1
μs
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
‹
IC=3A ;IB1=-IB2=0.3A
VCC=50V
hFE-2 Classifications
R
Q
P
60-120
90-180
130-260
2
Inchange Semiconductor
Product Specification
2SD1271 2SD1271A
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
Inchange Semiconductor
Product Specification
2SD1271 2SD1271A
Silicon NPN Power Transistors
4
Inchange Semiconductor
Product Specification
2SD1271 2SD1271A
Silicon NPN Power Transistors
5