isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3833 DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 10 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak 24 A IB Base Current-Continuous 4 A PC Collector Power Dissipation @ TC=25℃ 100 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3833 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 1.4A 0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 7A; IB= 1.4A 1.3 V ICBO Collector Cutoff Current VCB= 500V ; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 10V; IC= 0 0.1 mA hFE DC Current Gain IC= 7A ; VCE= 4V COB Output Capacitance IE= 0 ; VCB= 10V; ftest= 1.0MHz 105 pF Current-Gain—Bandwidth Product IE= -1A ; VCE= 12V 10 MHz fT CONDITIONS MIN TYP. MAX 400 UNIT V B B 10 30 Switching Times ton Turn-on Time tstg Storage Time tf IC= 7A,IB1= 0.7A; IB2= -1.4A RL= 28.5Ω; VCC= 200V Fall Time isc Website：www.iscsemi.cn 2 1.0 μs 3.0 μs 0.5 μs