isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Voltage: VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain : hFE= 2000(Min) @ IC= 3A, VCE= 2V APPLICATIONS ·Designed of driver of solenoid,motor and general purpose applications. SYMBOL ww PARAMETER w VALUE UNIT 120 V 120 V VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 10 A IB Base Current-Continuous 1 A PC Collector Power Dissipation @ TC=25℃ 50 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn n c . i m e s c s .i ABSOLUTE MAXIMUM RATINGS(Ta=25℃) 2SD2045 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD2045 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 3mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 3mA 2.0 V ICBO Collector Cutoff Current VCB= 120V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 10 mA hFE DC Current Gain IC= 3A; VCE= 2V fT COB MIN TYP. 120 B n c . i m e UNIT V B s c s i . w MAX 2000 Current-Gain—Bandwidth Product IE= -1A; VCE= 12V 50 MHz Output Capacitance IE= 0; VCB= 10V,ftest= 1MHz 70 pF 0.5 μs 5.5 μs 1.5 μs Switching times w w ton Turn-on Time tstg Storage Time tf CONDITIONS IC= 3A; IB1= -IB2= 3mA; RL= 10Ω; VCC= 30V Fall Time isc Website：www.iscsemi.cn 2