ISC 2SC4941

Inchange Semiconductor
Product Specification
2SC4941
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3PML package
・Switching power transistor
・High breakdown voltage
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
800
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
6
A
ICM
Collector current-Peak
12
A
IB
Base current
3
A
IB
Base current-Peak
6
A
PT
Total power dissipation
65
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
VALUE
UNIT
1.92
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance from junction to case
Inchange Semiconductor
Product Specification
2SC4941
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.2A ;IB=0
800
V
VCBO
Collector-base voltage
IC=1mA ;IE=0
1500
V
VCEsat
Collector-emitter saturation voltage
IC=3A ;IB=0.6A
0.5
V
VBEsat
Base-emitter saturation voltage
IC=3A; IB=0.6A
1.5
V
ICBO
Collector cut-off current
VCB=1200V; IE=0
100
μA
ICEO
Collector cut-off current
VCE=RatedVCEO; IB=0
100
μA
IEBO
Emitter cut-off current
VEB=RatedVEBO; IC=0
100
μA
hFE-1
DC current gain
IC=1A ; VCE=5V
15
hFE-2
DC current gain
IC=1mA ; VCE=5V
7
Transition frequency
IC=0.6A ; VCE=10V
fT
CONDITIONS
MIN
TYP.
MAX
8
UNIT
MHz
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=3A
IB1=0.6A; IB2=-1.2A
VBB2=4V
RL=85Ω
2
0.5
μs
3.5
μs
0.3
μs
Inchange Semiconductor
Product Specification
2SC4941
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3