ISC 2SC5003

Inchange Semiconductor
Product Specification
2SC5003
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3PML package
・High voltage switching transistor
・Built-in damper diode
APPLICATIONS
・Display horizontal deflection output;
switching regulator and general purpose
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
800
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
7
A
ICM
Collector current-peak
14
A
IB
Base current
3.5
A
PC
Collector power dissipation
80
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC5003
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)EBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
6
UNIT
Base-emitter breakdown voltage
IEB=300mA; IB=0
V
VCEsat
Collector-emitter saturation voltage
IC=5A;IB=1.2A
5
V
VBEsat
Base-emitter saturation voltage
IC=5A;IB=1.2A
1.5
V
ICBO1
Collector cut-off current
VCB=1200V; IE=0
100
μA
ICBO2
Collector cut-off current
VCB=1500V; IE=0
1
mA
ICEO
Collector cut-off current
VCE=800V; IE=0
1
mA
IEBO
Emitter cut-off current
VEB=6V; IC=0
100
μA
hFE-1
DC current gain
IC=1A ; VCE=5V
8
hFE-2
DC current gain
IC=5A ; VCE=5V
4
VFEC
Forward voltage
IEC=7A
fT
Transition frequency
IE=-0.5A ; VCE=12V
COB
Output capacitance
VCB=10V;f=1MHz
9
2.0
V
4
MHz
100
pF
Switching times
tstg
tf
Storage time
Fall time
IC=4A;IB1=0.8A;
IB2=-1.6A;RL=50Ω
VCC=200V
2
4.0
μs
0.2
μs
Inchange Semiconductor
Product Specification
2SC5003
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
2SC5003
Silicon NPN Power Transistors
4