isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5993 DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 180V(Min) ·Complement to Type 2SA2140 APPLICATIONS ·Power amplification ·For TV VM circuit ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Peak 3.0 A Collector Power Dissipation @ Ta=25℃ 2.0 PC TJ Tstg W Collector Power Dissipation @TC=25℃ 20 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5993 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A 0.5 V ICBO Collector Cutoff Current VCB= 180V; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 100 μA hFE DC Current Cain IC= 0.1A; VCE= 5V Current-Gain—Bandwidth Product IC= 0.2A; VCE= 10V; f= 10MHz 130 MHz Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz 10 pF 0.1 μs 0.5 μs 0.1 μs fT COB CONDITIONS MIN TYP. MAX 180 UNIT V B 60 240 Switching Time, Resistance Loaded ton Turn-on Time tstg Storage Time tf IC= 0.4A, IB1= -IB2= 0.04A; VCC= 100V Fall Time hFE Classifications Q P 60-140 120-240 isc Website：www.iscsemi.cn 2