Inchange Semiconductor Product Specification 2SD959 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Low collector saturation voltage ・Complement to type 2SB867 ・Excellent linearity of hFE APPLICATIONS ・For power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER CONDITIONS VALUE UNIT Collector-base voltage Open emitter 130 V Collector-emitter voltage Open base 80 V Emitter-base voltage Open collector 7 V IC Collector current (DC) 3 A ICM Collector current-peak 6 A PC Collector power dissipation 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD959 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IE=0 VCEsat Collector-emitter saturation voltage IC=2A; IB=0.1A 0.5 V VBEsat Base-emitter saturation voltage IC=2A; IB=0.1A 1.5 V ICBO Collector cut-off current VCB=100V;IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 50 μA hFE-1 DC current gain IC=0.1A ; VCE=2V 45 hFE-2 DC current gain IC=0.5A ; VCE=2V 60 Transition frequency IC=0.5A ; VCE=10V fT CONDITIONS MIN TYP. MAX 80 UNIT V 260 30 R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH MHz Switching times ton ts tf Turn-on time IC=0.5A IB1=-IB2=50mA Storage time Fall time hFE-2 classifications R Q P 60-120 90-180 130-260 2 0.5 μs 2.5 μs 0.15 μs Inchange Semiconductor Product Specification 2SD959 Silicon NPN Power Transistors PACKAGE OUTLINE R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification 2SD959 Silicon NPN Power Transistors R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH 4 Inchange Semiconductor Product Specification 2SD959 Silicon NPN Power Transistors R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH 5