Inchange Semiconductor Product Specification 2SD402 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SB547 ・High breakdown voltage APPLICATIONS ・Designed for use in line-operated color TV vertical deflection of complementary symmetry circuit PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 200 V VCEO Collector-emitter voltage Open base 150 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 2.0 A ICM Collector current-Peak 3.0 A IB Base current 1.5 A PC Collector dissipation 20 W Tj Junction temperature 150 ℃ Tstg Storage temperature -50~150 ℃ MAX UNIT 4.16 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rθjc CHARACTERISTICS Thermal resistance junction to case Inchange Semiconductor Product Specification 2SD402 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=25mA; IB=0 150 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 5 V Collector-emitter saturation voltage IC=0.5A; IB=50mA 2.0 V ICBO Collector cut-off current VCB=150V; IE=0 50 μA IEBO Emitter cut-off current VEB=4V; IC=0 50 μA hFE DC current gain IC=0.4A ; VCE=10V fT Transition frequency IC=0.4A ; VCE=10V 7 MHz CC Collector capacitance IE=0 ; VCB=10V;f=1.0MHz 45 pF VCEsat CONDITIONS 2 MIN TYP. MAX UNIT 40 Inchange Semiconductor Product Specification 2SD402 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3