Inchange Semiconductor Product Specification 2SD743 2SD743A Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SB703/703A APPLICATIONS ・Designed for use in audio frequency power amplifier ,low speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-220) and symbol Maximum absolute ratings(Ta=25℃) SYMBOL VCBO CONDITIONS Collector-base voltage Open emitter 2SD743 VCEO Collector-emitter voltage VALUE UNIT 100 V 80 Open base 2SD743A VEBO TOR 体 U 导 D 半 N O C 固电 I EM S E G N A INCH PARAMETER 5 V Collector current 4 A ICM Collector current-Peak 6 A IB Base current 1 A PC Collector power dissipation 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -50~150 ℃ MAX UNIT 3.125 ℃/W IC Emitter-base voltage Open collector V 100 TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rθjc CHARACTERISTICS Thermal resistance junction to case Inchange Semiconductor Product Specification 2SD743 2SD743A Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SD743 V(BR)CEO Collector-emitter breakdown voltage TYP. MAX UNIT 80 IC=10mA; IB=0 2SD743A V 100 V(BR)CBO Collector-base breakdown voltage IC=1.0mA; IE=0 100 V V(BR)EBO Emitter-base breakdown voltage IE=1.0mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3A 2.0 V VBEsat Base-emitter saturation voltage IC=3A; IB=0.3A 2.0 V Collector cut-off current VCB=80V; IE=0 10 μA R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH μA ICBO IEBO hFE-1 hFE-2 fT MIN Emitter cut-off current VEB=3V; IC=0 DC current gain IC=20mA ; VCE=5V 20 DC current gain IC=0.5A ; VCE=5V 40 Transition frequency IC=0.1A ; VCE=5V;f=1.0MHz 10 hFE-2 Classifications S R Q 40-80 60-120 100-200 2 10 200 MHz Inchange Semiconductor Product Specification 2SD743 2SD743A Silicon NPN Power Transistors PACKAGE OUTLINE R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3