ISC 2SD401A

Inchange Semiconductor
Product Specification
2SD401A
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-220C package
・Complement to type 2SB546A
・Collector current IC=2A
・Collector-collector voltage:VCEO=150V(Min)
APPLICATIONS
・For use in general purpose power amplifier,
vertical output application
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
200
V
VCEO
Collector-emitter voltage
Open base
150
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
2
A
ICM
Collector current-peak
3
A
PD
Total power dissipation
25
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
MAX
UNIT
5.0
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rθjc
CHARACTERISTICS
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
2SD401A
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA; IB=0
150
V
V(BR)CBO
Collector-base breakdown voltage
IC=0.5mA; IE=0
200
V
V(BR)EBO
Emitter-base breakdown votage
IE=0.5mA; IB=0
5
V
Collector-emitter saturation voltage
IC=500m A;IB=50m A
1.0
V
ICBO
Collector cut-off current
VCB=150V; IE=0
50
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
50
μA
hFE
DC current gain
IC=0.4A ; VCE=10V
Transition frequency
IC=0.4A ; VCE=10V;f=1MHz
VCEsat
fT
‹
CONDITIONS
hFE classifications
M
L
K
40-80
60-120
100-200
2
MIN
TYP.
40
MAX
UNIT
200
5
MHz
Inchange Semiconductor
Product Specification
2SD401A
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3