Inchange Semiconductor Product Specification BDX67 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High current capability ・DARLINGTON APPLICATIONS ・Designed for power amplification and switching application. PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 16 A ICM Collector current(peak) 20 A IB Base current 0.25 A PT Total power dissipation 117 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~200 ℃ MAX UNIT 1.17 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case Inchange Semiconductor Product Specification BDX67 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX 60 UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0;L=25mH V VCEsat Collector-emitter saturation voltage IC=10A ;IB=0.04A 2 V ICBO Collector cut-off current VCB=40V; IE=0 TC=150℃ 1 5 mA ICEO Collector cut-off current VCE=30V; IB=0 3 mA IEBO Emitter cut-off current VEB=5V; IC=0 3 mA Switching times ton Turn-on time toff Turn-off time IC=10A ; IB1=-IB2=0.04A VCC=12V ; 2 1.0 μs 3.5 μs Inchange Semiconductor Product Specification BDX67 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3