FIO 50-12BD IC25 = 50 A = 1200 V VCES VCE(sat) typ. = 2.0 V Bidirectional Switch with NPT3 IGBT and fast Diode Bridge in ISOPLUS i4-PACTM 3 2 1 1 4 5 5 Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 39 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH tSC (SCSOA) VCE = 900V; VGE = ±15 V; RG = 39 Ω; TVJ = 125°C non-repetitive Ptot TC = 25°C Symbol Conditions VCE(sat) IC = 30 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 1 mA; VGE = VCE ICES VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C IGES td(on) tr td(off) tf Eon Eoff Cies QGon 1200 V ± 20 V 50 32 A A 50 VCES A 10 µs 200 W Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.0 2.3 4.5 2.6 V V 6.5 V 0.4 mA mA 200 nA 0.4 VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 600 V; IC = 30 A VGE = ±15 V; RG = 39 Ω 85 50 440 50 4.6 2.2 ns ns ns ns mJ mJ VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 35 A 2 150 nF nC 1.2 0.6 K/W K/W Applications switches to control bidirectional current flow by a single control signal: • matrix converters • spare matrix converters • AC controllers 340 RthJC RthJS • NPT3 IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits • HiPerFREDTM diodes - fast reverse recovery - low operating forward voltage - low leakage current • ISOPLUS i4-PACTM package - isolated back surface - low coupling capacity between pins and heatsink - enlarged creepage towards heatsink - application friendly pinout - low inductive current path - high reliability - industry standard outline - UL registered, E 72873 © 2003 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 1-4 IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670 FIO 50-12BD Diodes Equivalent Circuits for Simulation Symbol Conditions Maximum Ratings IF25 IF90 TC = 25°C TC = 90°C 48 25 Symbol Conditions Characteristic Values min. typ. max. VF IF = 30 A; TVJ = 25°C TVJ = 125°C 2.4 1.8 IRM t rr RthJC RthJS A A 2.8 V V 27 150 A ns 1.6 1.3 K/W K/W (per diode) Conduction IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 0.95 V; R0 = 45 mΩ Diode (typ. at TJ = 125°C) V0 = 1.26V; R0 = 15 mΩ Thermal Response Component Symbol Conditions Maximum Ratings TVJ Tstg VISOL IISOL ≤ 1 mA; 50/60 Hz FC mounting force with clip Symbol Conditions Cp coupling capacity between shorted pins and mounting tab in the case dS,dA dS,dA pin - pin pin - backside metal °C °C 2500 V~ 20...120 N Diode Cth1 = 0.039 J/K; Rth1 = 0.337 K/W Cth2 = 0.090 J/K; Rth2 = 0.963 K/W Characteristic Values min. typ. max. 40 1.7 5.5 pF mm mm 9 Dimensions in mm (1 mm = 0.0394") g 340 Weight -55...+150 -55...+125 IGBT Cth1 = 0.067 J/K; Rth1 = 0.108 K/W Cth2 = 0.175 J/K; Rth2 = 0.491 K/W © 2003 IXYS All rights reserved 2-4 FIO 50-12BD 120 VGE = 17 V A 120 A 100 15 V 100 IC 13 V 80 VGE = 17 V 15 V IC 80 60 13 V 60 11 V 11 V 40 40 9V 20 9V 20 TVJ = 125°C TVJ = 25°C 0 0 0 1 2 3 4 6 V 7 5 0 1 2 3 4 VCE Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 90 A 75 120 VCE = 20 V A 100 IC 6 V 7 5 VCE IF 80 60 60 45 40 30 TVJ = 125°C TVJ = 25°C TVJ = 125°C 15 20 TVJ = 25°C 0 0 4 6 8 10 12 0 14 V 16 1 2 V 3 4 VF VGE Fig. 3 Typ. transfer characteristics Fig. 4 20 10 V K/W 15 ZthJC VGE Typ. forward characteristics of free wheeling diode diode 1 IGBT 0.1 10 0.01 5 single pulse 0.001 VCE = 600 V IC = 35 A 0 0 40 80 120 160nC 200 0.0001 0.001 1 s 10 Fig. 6 Typ. transient thermal impedance 340 Typ. turn on gate charge 0.1 t QG Fig. 5 MUBW3512E7 0.01 © 2003 IXYS All rights reserved 3-4 FIO 50-12BD 20 mJ 6 100 ns 90 td(on) 16 mJ 80 Eon 70 12 t Eoff VCE = 600 V VGE = ±15 V RG = 39 Ω TVJ = 125°C 0 4 800 t 600 40 A 60 td(off) 2 30 200 10 tf 0 0 80 20 40 60 IC 8 mJ Eon 6 0 80 A IC Typ. turn on energy and switching times versus collector current Fig. 8 4 160 VCE = 600 V VGE = ±15 V IC = 35 A TVJ = 125°C 400 20 0 Fig. 7 1000 RG = 39 Ω TVJ = 125°C 40 4 20 Eoff 50 Eon 0 1200 ns 60 tr 8 VCE = 600 V VGE = ±15 V mJ ns Eon 120 t Eoff 3 td(on) 4 tr 2 Typ. turn off energy and switching times versus collector current 800 VCE = 600 V VGE = ±15 V IC = 35 A TVJ = 125°C ns 600 t Eoff 80 2 40 1 0 0 10 400 td(off) 200 tf 0 10 20 30 40 50 60 70 Ω 80 RG Typ. turn on energy and switching times versus gate resistor 30 40 50 60 70 Ω 80 RG Fig.10 Typ. turn off energy and switching times versus gate resistor 340 Fig. 9 0 20 © 2003 IXYS All rights reserved 4-4